FQP5N50C Fairchild Semiconductor, FQP5N50C Datasheet

MOSFET N-CH 500V 5A TO-220

FQP5N50C

Manufacturer Part Number
FQP5N50C
Description
MOSFET N-CH 500V 5A TO-220
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQP5N50C

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.4 Ohm @ 2.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
24nC @ 10V
Input Capacitance (ciss) @ Vds
625pF @ 25V
Power - Max
73W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.4 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
5.2 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
5 A
Power Dissipation
73000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Manufacturer
Quantity
Price
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©2003 Fairchild Semiconductor Corporation
FQP5N50C/FQPF5N50C
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Absolute Maximum Ratings
* Drain current limited by maximum junction temperature
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JS
JA
STG
G
D
S
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
TO-220
FQP Series
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
T
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
G
D
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• Low gate charge ( typical 18nC)
• Low Crss ( typical 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
5A, 500V, R
TO-220F
FQPF Series
FQP5N50C
FQP5N50C
DS(on)
0.58
1.71
62.5
2.9
0.5
20
73
5
-55 to +150
= 1.4
500
300
300
7.3
4.5
5
30
FQPF5N50C
FQPF5N50C
G
@V
! ! ! !
! ! ! !
2.9 *
3.31
62.5
20 *
0.3
5 *
38
GS
--
QFET
= 10 V
◀ ◀ ◀ ◀
◀ ◀ ◀ ◀
! ! ! !
! ! ! !
! ! ! !
! ! ! !
D
S
● ●
● ●
● ●
● ●
● ●
● ●
▲ ▲ ▲ ▲
▲ ▲ ▲ ▲
Units
Units
W/°C
°C/W
°C/W
°C/W
V/ns
mJ
mJ
Rev. A, April 2003
°C
°C
W
V
A
A
A
V
A
TM

Related parts for FQP5N50C

FQP5N50C Summary of contents

Page 1

... S FQP5N50C FQPF5N50C Units 500 2.9 2 300 7.3 mJ 4.5 V/ 0.58 0.3 W/°C -55 to +150 °C 300 °C FQP5N50C FQPF5N50C Units 1.71 3.31 °C/W 0.5 -- °C/W 62.5 62.5 °C/W Rev. A, April 2003 TM ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 21 50V 5A, di/dt 200A Starting DSS, 4. Pulse Test : Pulse width 300 s, Duty cycle 5. Essentially independent of operating temperature ©2003 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 500 400 125° ...

Page 3

... Drain Current [A] D Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 1200 1000 800 C iss C oss 600 400 C rss 200 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2003 Fairchild Semiconductor Corporation ※ Notes : 1. 250μ s Pulse Test 25℃ Figure 2. Transfer Characteristics 10V 20V GS ※ ...

Page 4

... ※ Notes : 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9-1. Maximum Safe Operating Area for FQP5N50C Case Temperature [ ℃ Figure 10. Maximum Drain Current vs Case Temperature ©2003 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 250 μ 0 ...

Page 5

... Typical Characteristics Figure 11. Transient Thermal Response Curve for FQP5N50C Figure 11-2. Transient Thermal Response Curve for FQPF5N50C ©2003 Fairchild Semiconductor Corporation (Continued) ※ tio ※ tio ( ℃ θ (t) θ ( ℃ θ (t) θ Rev. A, April 2003 ...

Page 6

... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2003 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT 10% 10 DUT DUT ...

Page 7

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2003 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 8

... Mechanical Dimensions ©2003 Fairchild Semiconductor Corporation TO - 220 Dimensions in Millimeters Rev. A, April 2003 ...

Page 9

... Package Dimensions 10.16 (7.00) MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ©2003 Fairchild Semiconductor Corporation (Continued) TO-220F ø3.18 0.20 0.10 (1.00x45 ) 2.54TYP [2.54 ] 0.20 0.20 2.54 0.20 (0.70) +0.10 0.50 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A, April 2003 ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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