FDD6780A Fairchild Semiconductor, FDD6780A Datasheet

MOSFET N-CH 25V 16.4A DPAK

FDD6780A

Manufacturer Part Number
FDD6780A
Description
MOSFET N-CH 25V 16.4A DPAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDD6780A

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.6 mOhm @ 16.4A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
16.4A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
24nC @ 10V
Input Capacitance (ciss) @ Vds
1235pF @ 13V
Power - Max
3.7W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0086 Ohm @ 10 V
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
16.4 A
Power Dissipation
3700 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDD6780ATR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDD6780A
Manufacturer:
FAIRCHILD
Quantity:
8 000
©2009 Fairchild Semiconductor Corporation
FDD6780A / FDU6780A_F071 Rev.C
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDD6780A / FDU6780A_F071
N-Channel PowerTrench
25 V, 8.6 mΩ
Features
V
V
I
E
P
T
R
R
D
J
DS
GS
AS
D
θJC
θJA
Max r
Max r
100% UIL test
RoHS Compliant
, T
Symbol
Device Marking
STG
FDD6780A
FDU6780A
DS(on)
DS(on)
G
S
= 8.6 mΩ at V
= 19.0 mΩ at V
D-PAK
(TO-252)
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case TO-252, TO-251
Thermal Resistance, Junction to Ambient TO-252
GS
FDU6780A_F071
GS
= 10 V, I
FDD6780A
= 4.5 V, I
-Continuous (Silicon limited)
-Pulsed
-Continuous
Device
D
D
D
= 16.4 A
= 12.2 A
T
G
®
C
= 25 °C unless otherwise noted
D
MOSFET
S
Parameter
D-PAK (TO-252)
TO-251AA
Package
Short-Lead I-PAK
(TO-251AA)
1
T
T
T
T
T
A
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized for low gate charge, low r
switching speed.
Applications
C
C
C
A
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
N/A(Tube)
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 3)
G
Tape Width
12 mm
N/A
S
D
-55 to +175
Ratings
16.4
32.6
±20
100
3.7
4.6
25
30
48
24
40
DS(on)
January 2009
www.fairchildsemi.com
2500 units
Quantity
75 units
and fast
Units
°C/W
mJ
°C
W
V
V
A

Related parts for FDD6780A

FDD6780A Summary of contents

Page 1

... Package Marking and Ordering Information Device Marking Device FDD6780A FDD6780A FDU6780A FDU6780A_F071 ©2009 Fairchild Semiconductor Corporation FDD6780A / FDU6780A_F071 Rev.C ® MOSFET General Description This N-Channel MOSFET has been designed specifically improve the overall efficiency of DC/DC converters using either = 12 synchronous or conventional switching PWM controllers ...

Page 2

... Gate to Drain “Miller” Charge gd Drain-Source Diode Characteristics V Source to Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr ©2009 Fairchild Semiconductor Corporation FDD6780A / FDU6780A_F071 Rev °C unless otherwise noted J Test Conditions = 250 µ 250 µA, referenced to 25 ° ...

Page 3

... R is guaranteed by design while R is determined by the user’s board design. θJC θJA 2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. ° based on starting mH ©2009 Fairchild Semiconductor Corporation FDD6780A / FDU6780A_F071 Rev °C/W when mounted pad copper = 100% test 0.1 mH °C/W when mounted on a minimum pad ...

Page 4

... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 175 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDD6780A / FDU6780A_F071 Rev °C unless otherwise noted J µ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 1.5 2.0 75 100 125 150 175 100 ...

Page 5

... Switching Capability 200 100 10 THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE MAX RATED 4.6 C/W θ 0.1 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2009 Fairchild Semiconductor Corporation FDD6780A / FDU6780A_F071 Rev °C unless otherwise noted J 3000 1000 100 0 100 25 Figure 10 ...

Page 6

... DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.003 - ©2009 Fairchild Semiconductor Corporation FDD6780A / FDU6780A_F071 Rev °C unless otherwise noted J SINGLE PULSE 4.6 C/W θ RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve SINGLE PULSE C/W θ ...

Page 7

... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2009 Fairchild Semiconductor Corporation FDD6780A / FDU6780A_F071 Rev.C ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...

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