FQD6N40CTM Fairchild Semiconductor, FQD6N40CTM Datasheet

MOSFET N-CH 400V 4.5A DPAK

FQD6N40CTM

Manufacturer Part Number
FQD6N40CTM
Description
MOSFET N-CH 400V 4.5A DPAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheets

Specifications of FQD6N40CTM

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1 Ohm @ 2.25A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
625pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
4.7 S
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
4.5 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Fall Time
38 ns
Rise Time
65 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQD6N40CTM
Manufacturer:
FAIRCHILD
Quantity:
8 000
Part Number:
FQD6N40CTM
0
©2008 Fairchild Semiconductor Internationa
FQD6N40C / FQU6N40C
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
electronic lamp ballasts based on half bridge topology.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient.*
Thermal Resistance, Junction-to-Ambient.
S
D-PAK
FQD Series
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
= 25°C)*
Parameter
= 25°C)
Parameter
G
T
C
D
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• Low gate charge ( typical 16nC)
• Low Crss ( typical 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant
I-PAK
FQU Series
4.5A, 400V, R
FQD6N40C / FQU6N40C
Typ
DS(on)
--
--
--
-55 to +150
= 1.0
0.38
400
270
300
4.5
2.7
4.5
4.8
4.5
2.5
18
48
30
G
! ! ! !
! ! ! !
@V
Max
110
2.6
50
October 2008
◀ ◀ ◀ ◀
◀ ◀ ◀ ◀
GS
QFET
! ! ! !
! ! ! !
! ! ! !
! ! ! !
D
S
● ●
● ●
● ●
● ●
● ●
● ●
= 10 V
▲ ▲ ▲ ▲
▲ ▲ ▲ ▲
Rev. A1, October 2008
Units
Units
W/°C
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
®

Related parts for FQD6N40CTM

FQD6N40CTM Summary of contents

Page 1

... R Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient When mounted on the minimum pad size recommended (PCB Mount) ©2008 Fairchild Semiconductor Internationa Features • 4.5A, 400V, R • Low gate charge ( typical 16nC) • Low Crss ( typical 15pF) • Fast switching • 100% avalanche tested • ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 13.7 mH 50V 6A, di/dt 200A Starting DSS, 4. Pulse Test : Pulse width 300 s, Duty cycle 5. Essentially independent of operating temperature ©2008 Fairchild Semiconductor Internationa T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 400 320 125° ...

Page 3

... Drain Current [A] D Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 1200 1000 800 C iss 600 C oss 400 C rss 200 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2008 Fairchild Semiconductor Internationa ※ Notes : 1. 250 μ s Pulse Test = 25 ℃ 10V 20V GS ※ Note : ℃ ...

Page 4

... ※ Notes : 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2008 Fairchild Semiconductor Internationa (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 250 μ 0.0 -100 100 150 200 o C] Figure 8. On-Resistance Variation 100 Figure 10. Maximum Drain Current ※ ...

Page 5

... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2008 Fairchild Semiconductor Internationa Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT 10% 10 DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2008 Fairchild Semiconductor Internationa + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Mechanical Dimensions ©2008 Fairchild Semiconductor Internationa D - PAK Dimensions in Millimeters Rev. A1, October 2008 ...

Page 8

... Mechanical Dimensions ©2008 Fairchild Semiconductor Internationa I - PAK Dimensions in Millimeters Rev. A1, October 2008 ...

Page 9

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...

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