FQD6N40CTM Fairchild Semiconductor, FQD6N40CTM Datasheet - Page 3

• Manufacturer Part Number: FQD6N40CTM
• Description: MOSFET N-CH 400V 4.5A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQD6N40CTM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 2.25A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 625pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 4.7 S
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Fall Time: 38 ns
• Rise Time: 65 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2008 Fairchild Semiconductor Internationa
Typical Characteristics
1200
1000
800
600
400
200
10
10
10
0
-1
3.5
3.0
2.5
2.0
1.5
1.0
0.5
10
1
0
10
Figure 5. Capacitance Characteristics
-1
-1
0
Figure 3. On-Resistance Variation vs
Top :
Bottom : 5.0 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
GS
5
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
10
0
0
I
D
, Drain Current [A]
C
C
C
iss
oss
rss
V
10
GS
= 10V
C
C
C
iss
oss
rss
= C
= C
10
10
= C
※ Notes :
1. 250 μ s Pulse Test
2. T
1
1
V
gs
gd
ds
GS
+ C
15
+ C
C
※ Note : T
= 25 ℃
= 20V
gd
gd
(C
※ Notes ;
1. V
2. f = 1 MHz
ds
= shorted)
GS
J
= 25 ℃
= 0 V
20
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
1
0
1
0
0.2
0
2
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
25
o
Variation with Source Current
C
0.4
150
150℃
o
C
5
4
V
DS
V
V
and Temperature
Q
V
GS
SD
= 320V
0.6
DS
G
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
, Total Gate Charge [nC]
V
= 200V
DS
25℃
= 80V
-55
o
C
0.8
10
6
1.0
※ Notes :
1. V
2. 250 μ s Pulse Test
※ Notes :
DS
1. V
2. 250 μ s Pulse Test
※ Note : I
15
8
= 40V
GS
= 0V
1.2
D
= 6A
Rev. A1, October 2008
10
1.4
20