FQPF9N25C Fairchild Semiconductor, FQPF9N25C Datasheet - Page 2
![MOSFET N-CH 250V 8.8A TO-220F](/photos/5/31/53149/mfg_to-220f_desc_sml.jpg)
FQPF9N25C
Manufacturer Part Number
FQPF9N25C
Description
MOSFET N-CH 250V 8.8A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQP9N25CTSTU.pdf
(10 pages)
Specifications of FQPF9N25C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
430 mOhm @ 4.4A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
8.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 10V
Input Capacitance (ciss) @ Vds
710pF @ 25V
Power - Max
38W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.43 Ohms
Forward Transconductance Gfs (max / Min)
7 S
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
8.8 A
Power Dissipation
38 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQPF9N25C
Manufacturer:
Fairchild Semiconductor
Quantity:
1 981
Company:
Part Number:
FQPF9N25C
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FQPF9N25C
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
FQPF9N25CRDTU
Manufacturer:
FSC
Quantity:
1 483
©2004 Fairchild Semiconductor Corporation
Electrical Characteristics
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.9mH, I
3. I
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Off Characteristics
BV
∆BV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
SD
FS
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
DSS
≤ 8.8A, di/dt ≤ 300A/µs, V
DSS
∆T
J
AS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= 8.8A, V
DD
= 50V, R
DD
Parameter
≤ BV
G
DSS,
= 25 Ω, Starting T
Starting T
J
= 25°C
T
J
C
= 25°C
= 25°C unless otherwise noted
V
I
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= 250 µA, Referenced to 25°C
/ dt = 100 A/µs
= 25 Ω
= 250 V, V
= 200 V, T
= V
= 40 V, I
= 25 V, V
= 200 V, I
= 0 V, I
= 30 V, V
= -30 V, V
= 10 V, I
= 125 V, I
= 10 V
= 0 V, I
= 0 V, I
Test Conditions
GS
, I
D
S
S
D
D
D
= 250 µA
= 8.8 A
= 8.8 A,
GS
DS
D
D
= 250 µA
DS
= 4.4 A
GS
C
= 4.4 A
= 8.8 A,
= 8.8 A,
= 125°C
= 0 V
= 0 V,
= 0 V
= 0 V
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Min
250
2.0
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0.30
0.35
45.5
26.5
13.5
1.58
Typ
545
218
115
7.0
3.5
15
85
90
65
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-100
Max
0.43
35.2
100
100
710
150
180
190
140
4.0
8.8
1.5
10
60
40
35
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Rev. A, March 2004
Units
V/°C
µA
µA
nA
nA
nC
nC
nC
µC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
Ω
S
A
A
V