FDS6375 Fairchild Semiconductor, FDS6375 Datasheet

FDS6375

Manufacturer Part Number

FDS6375

Description

MOSFET P-CH 20V 8A 8-SOIC

Manufacturer

Fairchild Semiconductor

Series

PowerTrench®r

Datasheet

1.FDS6375.pdf (5 pages)

Specifications of FDS6375

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

24 mOhm @ 8A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

1.5V @ 250µA

Gate Charge (qg) @ Vgs

36nC @ 4.5V

Input Capacitance (ciss) @ Vds

2694pF @ 10V

Power - Max

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Configuration

Single Quad Drain Triple Source

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.024 Ohm @ 4.5 V

Forward Transconductance Gfs (max / Min)

35 S

Drain-source Breakdown Voltage

20 V

Gate-source Breakdown Voltage

+/- 8 V

Continuous Drain Current

8 A

Power Dissipation

2500 mW

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Fall Time

57 ns

Rise Time

9 ns

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

FDS6375TR

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Final PCN Q3073705 is an addendum for Final PCN Q1070805.

This is to inform you that a design and/or process change will be made to the following

product(s). This notification is for your information and concurrence.

If you require data or samples to qualify this change, please contact Fairchild Semiconductor

within 30 days of receipt of this notification.

Updated process quality documentation, such as FMEAs and Control Plans, are available for

viewing upon request.

If you have any questions concerning this change, please contact:

PCN Originator:

Name: Kalabkova, Ivana

E-mail: Ivana.Kalabkova@notes.fairchildsemi.com

Phone: 408-822-2187

Implementation of change:

Expected 1st Device Shipment Date: 2007/12/10

Earliest Year/Work Week of Changed Product: 0750

Change Type Description: Bond Wire Material Composition

Description of Change (From): Wirebond material using 2mil Gold (Au) wire for SO8 devices

manufactured in subcontractor site, GEM Electronics Ltd Shanghai China.

Description of Change (To): Wirebond material using 2mil Copper (Cu) wire for SO8 devices

manufactured in subcontractor site, GEM Electronics Ltd Shanghai China.

Reason for Change : Qualification of GEM as alternate site for Cu wire bonded parts for SO-8.

Products will be shipped for an interim period of time with Au wire until the inventory is

depleted and then converted to Cu wire. GEM Electronics Ltd., Shanghai China is TS-16949

certified.

Qual/REL Plan Numbers : Q20070231

Qualification :

This change will have no impact on any of the electrical parameters of the products

involved. The product test conditions, test limits and performance will remain

unchanged. Products will be built with the same level of quality and reliability as with

the existing products. The devices for qualification and qualification requirements are

defined in the table below.

Results/Discussion

Test: (Autoclave)

DESIGN/PROCESS CHANGE NOTIFICATION -- FINAL

Technical Contact:

Name: Rivero, Douglas

E-mail: Doug.Rivero@fairchildsemi.com

Phone: 1-408-822-2143

Date Issued On : 2007/10/12

Date Created : 2007/09/11

PCN# : Q3073705

Pg. 1

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FDS6375 Summary of contents

Page 1

... This is to inform you that a design and/or process change will be made to the following product(s). This notification is for your information and concurrence. If you require data or samples to qualify this change, please contact Fairchild Semiconductor within 30 days of receipt of this notification. Updated process quality documentation, such as FMEAs and Control Plans, are available for viewing upon request ...

Page 2

Lot Device Q20070231AAACLV FDS6912A Q20070231BAACLV FDS3570 Q20070231CAACLV FDS3672 Q20070231DAACLV FDS8870 Test: (High Temperature Gate Bias) Lot Device Q20070231AAHTGB FDS6912A Q20070231BAHTGB FDS3570 Q20070231CAHTGB FDS3672 Q20070231DAHTGB FDS8870 Test: (High Temperature Reverse Bias) Lot Device Q20070231AAHTRB FDS6912A Q20070231BAHTRB FDS3570 Q20070231CAHTRB FDS3672 Q20070231DAHTRB FDS8870 ...

Page 3

... FDS9412_NL FDS9926A_NF40 FDS9933_NL FDS9953A_NL NDS8425_NL SI4542DY_NL FDS2572_NL FDS2670_NL FDS3601 FDS3672_NL FDS3812_NL FDS3992 FDS4435A_F095 FDS4470_NF40 FDS4480_NL FDS4885C_NF40 FDS4953_NF40 FDS5670_NL FDS5680_NL FDS5692Z FDS6375_NF40 FDS6575_NF40 FDS6609A_NL FDS6680A_F095 FDS6682_NL FDS6694_NF40 FDS6875_NF40 FDS6890A_NL FDS6892A_NL FDS6898AZ_NF40 FDS6898A_NF40 FDS6910_NL FDS6912_NL FDS6961A_NF011 FDS6982AS FDS6990A_NL FDS8813NZ FDS8958A_NF40 FDS9400A FDS9435A_NF40 FDS9926A_NL ...

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