FDS6690AS Fairchild Semiconductor, FDS6690AS Datasheet

MOSFET N-CH 30V 10A 8SOIC

FDS6690AS

Manufacturer Part Number
FDS6690AS
Description
MOSFET N-CH 30V 10A 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Type
Power MOSFETr
Datasheet

Specifications of FDS6690AS

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
3V @ 1mA
Gate Charge (qg) @ Vgs
23nC @ 10V
Input Capacitance (ciss) @ Vds
910pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.012 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
45 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
10 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.012Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Part Number
Manufacturer
Quantity
Price
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Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
FDS6690AS
30V N-Channel PowerTrench
General Description
The FDS6690AS is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies.
maximize power conversion efficiency, providing a low
R
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
the
synchronous rectifier is close to the performance of the
FDS6690A in parallel with a Schottky diode.
Applications
• DC/DC converter
• Low side notebooks
©2008 Fairchild Semiconductor Corporation
D
J
DSS
GSS
D
θJA
θJC
DS(ON)
, T
Device Marking
STG
FDS6690AS
FDS6690AS
and low gate charge.
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
This 30V MOSFET is designed to
as
D
SO-8
D
the
D
– Continuous
– Pulsed
low-side
FDS6690AS
S
The performance of
Device
Parameter
The FDS6690AS
S
S
switch
G
®
T
A
SyncFET
=25
in
o
C unless otherwise noted
a
Reel Size
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1c)
(Note 1)
13’’
Features
• 10 A, 30 V.
• Includes SyncFET Schottky diode
• Low gate charge (16nC typical)
• High performance trench technology for extremely low
• High power and current handling capability
R
DS(ON)
5
6
7
8
R
R
Tape width
DS(ON)
DS(ON)
–55 to +150
12mm
Ratings
max= 12 mΩ @ V
max= 15 mΩ @ V
±20
2.5
1.2
30
10
50
50
25
1
May 2008
4
3
2
1
GS
GS
FDS6690AS Rev A2(X)
2500 units
Quantity
= 10 V
= 4.5 V
Units
°C/W
°C/W
°C
W
V
V
A
tm

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FDS6690AS Summary of contents

Page 1

... FDS6690AS 30V N-Channel PowerTrench General Description The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low R and low gate charge. The FDS6690AS DS(ON) includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology ...

Page 2

... Test Conditions Min mA, Referenced to 25° ± mA, Referenced to 25° =10A, T =125° 1.0 MHz mV 1.0 MHz Ω GEN Ω 4 GEN Typ Max Units mV/°C µA 500 ±100 –4 mV/° mΩ 910 pF 270 pF 100 pF Ω 2 2.3 nC 3.0 nC FDS6690AS Rev A2 (X) ...

Page 3

... TA = 25°C unless otherwise noted Test Conditions 3 10A 300 A/µ determined by the user's board design. θCA b) 105°/W when 2 2 mounted on a .04 in pad copper Min Typ Max 3.5 0.6 0.7 (Note (Note 3) c) 125°/W when mounted on a minimum pad. FDS6690AS Rev A2 (X) Units ...

Page 4

... C 0.01 0.001 3 3 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 4.0V 4.5V 5.0V 6.0V 10V DRAIN CURRENT ( 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage -55 C 0.2 0.4 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS6690AS Rev A2 ( 0.8 ...

Page 5

... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 125°C/W θ 25° 100 t , TIME (sec) 1 Power Dissipation. R ( θJA θ 125 °C/W θJA P(pk (t) θ Duty Cycle 100 1000 FDS6690AS Rev A2(X) 30 1000 ...

Page 6

... Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS6690AS. 10nS/DIV Figure 12. FDS6690AS SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6690A) ...

Page 7

... Pulse Width ≤ 1µs Duty Cycle ≤ 0.1% Figure 19. Switching Time Test Circuit + Figure 16. Unclamped Inductive Waveforms + 10V DUT Charge, (nC) Figure 18. Gate Charge Waveform d(ON 90 DUT 50% 10% 0V Figure 20. Switching Time Waveforms BV DSS G(TOT OFF t d(OFF 90% 10% 10% 90% 50% Pulse Width FDS6690AS Rev A2(X) ...

Page 8

... Fairchild Semiconductor. The datasheet is for reference information only. ® The Power Franchise tm TinyBoost™ TinyBuck™ ® TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ ® UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ Definition Rev. I34 FDS6690AS Rev.A2(X) ...

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