FQPF11P06 Fairchild Semiconductor, FQPF11P06 Datasheet - Page 7

• Manufacturer Part Number: FQPF11P06
• Description: MOSFET P-CH 60V 8.6A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF11P06

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 175 mOhm @ 4.3A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 8.6A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 550pF @ 25V
• Power - Max: 30W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.175 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 4.75 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 8.6 A
• Power Dissipation: 30000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2004 Fairchild Semiconductor Corporation
Package Dimensions
[2.54
2.54TYP
MAX1.47
0.80
0.35
0.20
0.10
0.10
]
10.16
9.40
#1
(7.00)
0.20
0.20
[2.54
2.54TYP
TO-220F
ø3.18
0.20
]
0.10
(1.00x45 )
0.50
+0.10
–0.05
Dimensions in Millimeters
2.54
2.76
(0.70)
0.20
0.20
Rev. B4, March 2004