FDD8880 Fairchild Semiconductor, FDD8880 Datasheet - Page 2

• Manufacturer Part Number: FDD8880
• Description: MOSFET N-CH 30V 58A D-PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD8880

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 58A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 31nC @ 10V
• Input Capacitance (ciss) @ Vds: 1260pF @ 15V
• Power - Max: 55W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.009 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 13 A
• Power Dissipation: 55000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Fall Time: 32 ns
• Rise Time: 91 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2008 Fairchild Semiconductor Corporation
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: Package current limitation is 35A.
2: Starting T
3
B
I
I
V
r
C
C
C
R
Q
Q
Q
Q
Q
Q
t
t
t
t
t
t
V
t
Q
DSS
GSS
ON
d(ON)
r
d(OFF)
f
OFF
rr
DS(ON)
GS(TH)
VDSS
SD
ISS
OSS
RSS
G
g(TOT)
g(5)
g(TH)
gs
gs2
gd
RR
Symbol
J
= 25°C, L = 0.14mH, I
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Drain to Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
AS
Parameter
= 28A, V
(V
DD
GS
= 27V, V
= 10V)
T
C
= 25°C unless otherwise noted
GS
= 10V.
V
V
V
I
I
V
V
V
I
I
I
T
V
f = 1MHz
V
V
V
V
I
I
I
D
D
D
D
SD
SD
SD
SD
J
DS
GS
GS
GS
DS
GS
GS
GS
GS
DD
GS
= 250 A, V
= 35A, V
= 35A, V
= 35A, V
= 175
= 35A
= 15A
= 35A, dI
= 35A, dI
= 24V
= 0V
= 20V
= V
= 15V, V
= 0.5V, f = 1MHz
= 0V to 10V
= 0V to 5V
= 0V to 1V
= 15V, I
= 10V, R
Test Conditions
DS
o
C
, I
GS
GS
GS
D
D
SD
SD
GS
GS
GS
= 35A
= 10V
= 4.5V
= 10V,
= 250 A
/dt = 100A/ s
/dt = 100A/ s
= 0V,
= 0V
= 10
T
V
I
I
D
g
C
DD
= 1.0mA
= 35A
= 150
= 15V
o
C
Min
1.2
30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.007
0.009
0.013
1260
260
150
Typ
2.3
1.3
3.8
2.5
5.0
23
13
91
38
32
8
-
-
-
-
-
-
-
-
-
-
-
0.009
0.012
0.015
1.25
Max
250
147
108
2.5
1.7
1.0
100
31
17
27
14
1
-
-
-
-
-
-
-
-
-
-
-
-
FDD8880 Rev. B3
Units
nC
nC
nC
nC
nC
nC
nC
nA
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
A