RFD14N05SM9A Fairchild Semiconductor, RFD14N05SM9A Datasheet - Page 3

• Manufacturer Part Number: RFD14N05SM9A
• Description: MOSFET N-CH 50V 14A DPAK
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of RFD14N05SM9A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 20V
• Input Capacitance (ciss) @ Vds: 570pF @ 25V
• Power - Max: 48W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.1Ohm
• Drain-source On-volt: 50V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 14A
• Power Dissipation: 48W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 14 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: RFD14N05SM9A

©2002 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
100
10
1.0
0.4
1.2
0.8
0.6
0.2
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
1
0
1
0 0
0.01
0.1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
1
10
TEMPERATURE
25
-5
0.5
0.2
0.1
0.05
0.02
0.01
V
DS
SINGLE PULSE
, DRAIN TO SOURCE VOLTAGE (V)
T
C
50
DS(ON)
, CASE TEMPERATURE (
75
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
10
-4
100
Unless Otherwise Specified
125
o
DC
T
SINGLE PULSE
T
C)
J
C
= MAX RATED
= 25
10
o
150
-3
C
10ms
100ms
t, RECTANGULAR PULSE DURATION (s)
100µs
1ms
175
100
10
-2
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
100
16
12
10
8
4
0
25
10
-5
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FIGURE 5. PEAK CURRENT CAPABILITY
V
CASE TEMPERATURE
GS
10
50
-4
10
= 20V
V
-1
GS
T
C
= 10V
, CASE TEMPERATURE (
NOTES:
DUTY FACTOR: D = t
PEAK T
10
75
-3
t, PULSE WIDTH (s)
J
RFD14N05, RFD14N05SM, RFP14N05 Rev. B
= P
P
10
100
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
DM
DM
-2
10
x Z
I
0
=
θ
JA
1
t
10
t
I 25
125
1
/t
2
o
C DERATE PEAK
2
x R
-1



o
C)
θ
175
---------------------
JA
150
+ T
–
10
150
T C
A
0



10
1
175
10
1