HUF76407D3ST Fairchild Semiconductor, HUF76407D3ST Datasheet
HUF76407D3ST
Specifications of HUF76407D3ST
Related parts for HUF76407D3ST
HUF76407D3ST Summary of contents
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... UIS Rating Curve • Switching Time vs R Ordering Information PART NUMBER HUF76407D3 HUF76407D3S NOTE: When ordering, use the entire part number. Add the suffi obtain the TO-252AA variant in tape and reel, e.g., HUF76407D3ST Unless Otherwise Specified = 0.092 Ω, = 10V 0.107 Ω ...
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... CAPACITANCE SPECIFICATIONS Input Capacitance Output Capacitance Reverse Transfer Capacitance Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ©2001 Fairchild Semiconductor Corporation o C, Unless Otherwise Specified SYMBOL TEST CONDITIONS = 250 µ (Figure 12) ...
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... SINGLE PULSE 0. FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 200 100 V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION ©2001 Fairchild Semiconductor Corporation 150 175 125 o C) FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) FIGURE 4. PEAK CURRENT CAPABILITY 15 ...
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... DUTY CYCLE = 0.5% MAX 120 GATE TO SOURCE VOLTAGE (V) GS FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT ©2001 Fairchild Semiconductor Corporation (Continued) 100 100µs 1ms 10ms 100 200 NOTE: Refer to Fairchild Application Notes AN9321 and AN9322. FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING ...
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... V , DRAIN TO SOURCE VOLTAGE (V) DS FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 150 V = 4.5V 30V 100 GATE TO SOURCE RESISTANCE (Ω) GS FIGURE 15. SWITCHING TIME vs GATE RESISTANCE ©2001 Fairchild Semiconductor Corporation (Continued 250µ 120 160 200 o C) FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN ISS RSS ...
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... Test Circuits and Waveforms VARY t TO OBTAIN P R REQUIRED PEAK FIGURE 17. UNCLAMPED ENERGY TEST CIRCUIT g(REF) FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 21. SWITCHING TIME TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation DUT 0.01Ω DUT g(REF DUT DSS FIGURE 18. UNCLAMPED ENERGY WAVEFORMS ...
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... S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0 VOFF= -0.5) .ENDS NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley. ©2001 Fairchild Semiconductor Corporation DPLCAP 10 RSLC2 ...
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... Fairchild Semiconductor Corporation DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + ...
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... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...