FDD4243 Fairchild Semiconductor, FDD4243 Datasheet - Page 3

• Manufacturer Part Number: FDD4243
• Description: MOSFET P-CH 40V 6.7A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD4243

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 44 mOhm @ 6.7A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 6.7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 10V
• Input Capacitance (ciss) @ Vds: 1550pF @ 20V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.044 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 16 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.7 A
• Power Dissipation: 42000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD4243TR

FDD4243 Rev.C1
Typical Characteristics
60
50
40
30
20
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
Figure 3. Normalized On Resistance
60
50
40
30
20
10
Figure 1.
0
-50
1
0
0
Figure 5. Transfer Characteristics
V
V
V
V
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
I
GS
GS
GS
D
GS
-25
vs Junction Temperature
= -6.7A
-V
= -10V
= - 6V
= -5V
= -10V
-V
T
2
J
1
GS
DS
, JUNCTION TEMPERATURE
On Region Characteristics
, GATE TO SOURCE VOLTAGE (V)
0
, DRAIN TO SOURCE VOLTAGE (V)
25
3
T
2
J
= 150
50
µ
s
o
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
C
T
J
4
3
75
= 25°C unless otherwise noted
T
J
= -55
100
T
(
o
J
5
o
4
V
V
C
V
C
= 25
GS
GS
GS
)
125
= -4.5V
= - 3.0V
o
= -4V
C
µ
s
150
6
5
3
0.1
120
100
3.5
3.0
2.5
2.0
1.5
1.0
0.5
30
10
80
60
40
20
0.4
1
Figure 2.
Figure 4.
Forward Voltage vs Source Current
0
2
vs Drain Current and Gate Voltage
Figure 6.
V
T
GS
-
J
V
= 150
SD
= 0V
-V
3
, BODY DIODE FORWARD VOLTAGE (V)
10
GS
V
V
V
V
V
o
GS
GS
Normalized On-Resistance
GS
GS
I
C
0.6
GS
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to
D
-I
D
Source Voltage
= -5V
= -6V
= -6.7A
= -4.5V
= -4V
4
Source to Drain Diode
= -3.0V
, DRAIN CURRENT(A)
20
5
0.8
30
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
6
T
T
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
J
J
= 125
= 25
T
7
o
J
o
C
40
= -55
C
1.0
o
8
T
C
J
www.fairchildsemi.com
V
= 25
GS
50
= -10V
o
9
C
µ
s
µ
s
1.2
60
10