FQP13N10L Fairchild Semiconductor, FQP13N10L Datasheet

MOSFET N-CH 100V 12.8A TO-220

FQP13N10L

Manufacturer Part Number
FQP13N10L
Description
MOSFET N-CH 100V 12.8A TO-220
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Type
Power MOSFETr
Datasheet

Specifications of FQP13N10L

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
180 mOhm @ 6.4A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
12.8A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 5V
Input Capacitance (ciss) @ Vds
520pF @ 25V
Power - Max
65W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.18 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
9.5 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
12.8 A
Power Dissipation
65000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.18Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±20V
Drain Current (max)
12.8A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2000 Fairchild Semiconductor International
FQP13N10L
100V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state
performance, and withstand high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as high
efficiency switching DC/DC converters, and DC motor
control.
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
CS
JA
STG
resistance,
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
provide
G
D
S
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
superior
Parameter
= 25°C)
Parameter
T
C
FQP Series
C
C
switching
TO-220
= 25°C unless otherwise noted
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 12.8A, 100V, R
• Low gate charge ( typical 8.7 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175 C maximum junction temperature rating
Typ
0.5
DS(on)
--
--
G
FQP13N10L
!
!
-55 to +175
= 0.18
12.8
9.05
51.2
12.8
0.43
300
100
6.5
6.0
95
65
! "
! "
20
!
!
!
!
S
D
"
"
"
"
"
"
@V
Max
2.31
62.5
--
QFET
QFET
QFET
QFET
GS
December 2000
= 10 V
Rev. A4, December 2000
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

Related parts for FQP13N10L

FQP13N10L Summary of contents

Page 1

... C Parameter December 2000 QFET QFET QFET QFET DS(on " " ! " ! " G " " " " FQP13N10L Units 100 V 12.8 A 9. 12.8 A 6.5 mJ 6.0 V/ 0.43 W/°C -55 to +175 °C 300 °C Typ Max Units -- 2.31 ° ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 0.87mH 12.8A 25V 12.8A, di/dt 300A Starting DSS, 4. Pulse Test : Pulse width 300 s, Duty cycle 5. Essentially independent of operating temperature ©2000 Fairchild Semiconductor International T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 100 150° ...

Page 3

... V = 10V GS 0.2 0 Drain Current [A] D Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 1000 800 600 400 200 - Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2000 Fairchild Semiconductor International ※ Notes : 1. 250μ s Pulse Test 25℃ ※ Note : T = 25℃ 0.2 Figure 4. Body Diode Forward Voltage ...

Page 4

... Notes : 175 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2000 Fairchild Semiconductor International (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0.5 = 250 μ 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 15 12 100 ※ ...

Page 5

... 3mA 3mA Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2000 Fairchild Semiconductor International Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT DUT DUT 10% 10 DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2000 Fairchild Semiconductor International + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Package Dimensions 9.90 (8.70) ø3.60 1.27 0.10 2.54TYP [2.54 ] 0.20 10.00 ©2000 Fairchild Semiconductor International TO-220 0.20 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 ] 0.20 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Rev. A4, December 2000 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ CMOS™ EnSigna™ FACT™ FACT Quiet Series™ ...

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