FQP8P10 Fairchild Semiconductor, FQP8P10 Datasheet - Page 4

• Manufacturer Part Number: FQP8P10
• Description: MOSFET P-CH 100V 8A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP8P10

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 530 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 470pF @ 25V
• Power - Max: 65W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.53 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 4.3 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 65000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 410mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
10
10
1.2
1.1
1.0
0.9
0.8
-1
Figure 9. Maximum Safe Operating Area
-100
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
-V
T
vs. Temperature
J
DS
, Junction Temperature [
Operation in This Area
is Limited by R
0
, Drain-Source Voltage [V]
※ Notes :
1 0
1 0
1 0
1. T
2. T
3. Single Pulse
- 1
- 2
1 0
0
C
J
= 175
= 25
10
- 5
1
0 .0 2
0 .0 1
o
D = 0 . 5
0 .0 5
DS(on)
C
o
0 .2
0 .1
C
50
DC
Figure 11. Transient Thermal Response Curve
10 ms
100
1 0
(Continued)
s in g le p u ls e
o
- 4
1 ms
C]
※ Notes :
t
1. V
2. I
1
100 s
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
D
GS
= -250 μ A
150
= 0 V
10
2
1 0
- 3
200
1 0
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
8
6
4
2
0
-100
25
※ N o te s :
1 . Z
2 . D u ty F a c t o r , D = t
3 . T
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
1 0
- 1
θ J C
J M
P
-50
DM
50
- T
( t ) = 2 . 3 1 ℃ /W M a x .
C
vs. Case Temperature
= P
T
vs. Temperature
D M
J
T
t
, Junction Temperature [
1
C
75
t
0
, Case Temperature [ ℃ ]
* Z
1 0
2
1
0
θ J C
/t
2
( t )
100
50
1 0
1
125
100
o
C]
※ Notes :
1. V
2. I
150
150
D
GS
= -4.0 A
= -10 V
Rev. B, August 2002
200
175