FQPF2P25 Fairchild Semiconductor, FQPF2P25 Datasheet

MOSFET P-CH 250V 1.8A TO-220F

FQPF2P25

Manufacturer Part Number
FQPF2P25
Description
MOSFET P-CH 250V 1.8A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQPF2P25

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4 Ohm @ 900mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
1.8A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
8.5nC @ 10V
Input Capacitance (ciss) @ Vds
250pF @ 25V
Power - Max
32W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQPF2P25
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2000 Fairchild Semiconductor International
FQPF2P25
250V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters.
Absolute Maximum Ratings 
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
J
L
DSS
GSS
AS
AR
D
Symbol
Symbol
, T
JC
JA
STG
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
S
C
Parameter
Parameter
= 25°C)
 T
C
FQPF Series
C
C
TO-220F
= 25°C unless otherwise noted
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• -1.8A, -250V, R
• Low gate charge ( typical 6.5 nC)
• Low Crss ( typical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
G
! ! ! !
! ! ! !
Typ
--
--
DS(on)
FQPF2P25
-55 to +150
! ! ! !
! ! ! !
S
! ! ! !
! ! ! !
D


 
 


 
 
 

 

= 4.0






-1.14
-250
0.26
-1.8
-7.2
-1.8
-5.5
120
300
3.2
32
   
   
30
@V
Max
62.5
3.9
GS
QFET
QFET
QFET
QFET
= -10 V
April 2000
Units
W/°C
Units
°CW
°CW
V/ns
mJ
mJ
Rev. A, April 2000
°C
°C
W
V
A
A
A
V
A
TM

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FQPF2P25 Summary of contents

Page 1

... C Parameter April 2000 QFET QFET QFET QFET = 4 -10 V DS(on FQPF2P25 Units -250 -1.8 -1.14 -7.2 30 120 -1.8 3.2 -5.5 V/ns 32 0.26 W/°C -55 to +150 300 Typ Max Units -- 3.9 °CW -- 62.5 °C °C °C Rev. A, April 2000 ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 59mH -1.8A -50V -2.3A, di/dt  300A DSS, 4. Pulse Test : Pulse width  300 s, Duty cycle  2% 5. Essentially independent of operating temperature ©2000 Fairchild Semiconductor International T = 25°C unless otherwise noted C Test Conditions -250 -250 A, Referenced to 25° -250 ...

Page 3

... Drain Current [A] D Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 400 300 C iss C oss 200 C rss 100 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2000 Fairchild Semiconductor International Notes : 1. 250  s Pulse Test = 10V Note : 4.5 6.0 0.2 Figure 4. Body Diode Forward Voltage ...

Page 4

... Limited by R DS(on Notes : 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2000 Fairchild Semiconductor International (Continued) 2.5 2.0 1.5 1.0  Notes : 0 -250  0.0 100 150 200 -100 o C] 2.0 1 100 ms DC 1.0 0.5 0 Figure 11. Transient Thermal Response Curve  Notes : 1 ...

Page 5

... Resistive Switching Test Circuit & Waveforms -10V -10V Unclamped Inductive Switching Test Circuit & Waveforms -10V -10V ©2000 Fairchild Semiconductor International Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT -10V -10V DUT DUT DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2000 Fairchild Semiconductor International + + DUT DUT Driver Driver Compliment of DUT Compliment of DUT (N-Channel) (N-Channel) • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Package Dimensions 10.16 MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ©2000 Fairchild Semiconductor International TO-220F ø3.18 0.20 0.10 (7.00) (1.00x45 ) 2.54TYP [2.54 ] 0.20 0.20 2.54 0.20 (0.70) +0.10 0.50 2.76 –0.05 0.20 Rev. A, April 2000 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® FAST FASTr™ ...

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