FQD5P10TM Fairchild Semiconductor, FQD5P10TM Datasheet - Page 8

• Manufacturer Part Number: FQD5P10TM
• Description: MOSFET P-CH 100V 3.6A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQD5P10TM

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.05 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 250pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 1.05 Ohms
• Forward Transconductance Gfs (max / Min): 2.3 S
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: - 3.6 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Package Dimensions
I - PAK
Dimensions in Millimeters
©2008 Fairchild Semiconductor Corporation
Rev. B1, October 2008