FDD306P Fairchild Semiconductor, FDD306P Datasheet - Page 3

• Manufacturer Part Number: FDD306P
• Description: MOSFET P-CH 12V 6.7A D-PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD306P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 6.7A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 6.7A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1290pF @ 6V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 6.7A
• Drain Source Voltage Vds: 12V
• On Resistance Rds(on): 90mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -500mV
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.028 Ohms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 6.7 A
• Power Dissipation: 52 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDD306P Rev. C
Typical Characteristics
1.4
1.3
1.2
1.1
0.9
0.8
54
45
36
27
18
54
45
36
27
18
9
0
1
9
0
-50
0
0
V
I
GS
D
V
V
Figure 1. On-Region Characteristics.
Figure 3. On-Resistance Variation
= -6.7A
DS
GS
= -4.5V
-25
Figure 5. Transfer Characteristics.
= - 5V
= -4.5V
-4.0V
0
T
-V
J
1
1
, JUNCTION TEMPERATURE (°C)
GS
-V
withTemperature.
, GATE TO SOURCE VOLTAGE (V)
DS
25
, DRAIN-SOURCE VOLTAGE (V)
50
-3.5V
2
2
75
T
A
= -55°C
-3.0V
100
-2.5V
125
3
3
-2.0V
25°C
150
125°C
-1.8V
175
4
4
3
0.0001
0.001
Figure 6. Body Diode Forward Voltage Variation
0.08
0.06
0.04
0.02
0.01
100
2.5
1.5
0.5
0.1
0.1
10
2
1
0
1
0
0
0
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
V
V
T
GS
GS
A
= 25°C
= 0V
= -1.8V
Drain Current and Gate Voltage.
T
0.2
-V
9
A
= 125°C
SD
2
Gate-to-Source Voltage.
, BODY DIODE FORWARD VOLTAGE (V)
-2.0V
-V
GS
, GATE TO SOURCE VOLTAGE (V)
0.4
18
-I
D
, DRAIN CURRENT (A)
T
25°C
A
-2.5V
= 125°C
4
0.6
27
-55°C
-3.0V
6
0.8
36
-3.5V
45
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8
1
I
D
-4.5V
= -3.4A
1.2
54
10