SSN1N45BTA Fairchild Semiconductor, SSN1N45BTA Datasheet - Page 7

• Manufacturer Part Number: SSN1N45BTA
• Description: MOSFET N-CH 450V 500MA TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of SSN1N45BTA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.25 Ohm @ 250mA, 10V
• Drain To Source Voltage (vdss): 450V
• Current - Continuous Drain (id) @ 25° C: 500mA
• Vgs(th) (max) @ Id: 3.7V @ 250µA
• Gate Charge (qg) @ Vgs: 8.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 240pF @ 25V
• Power - Max: 900mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.25 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.7 S
• Drain-source Breakdown Voltage: 450 V
• Gate-source Breakdown Voltage: +/- 50 V
• Continuous Drain Current: 0.5 A
• Power Dissipation: 900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Package Dimensions
[1.27
1.27TYP
0.46
0.20
0.10
]
3.60
4.58
+0.25
–0.15
0.20
(R2.29)
[1.27
1.27TYP
TO-92
0.20
]
0.38
Dimensions in Millimeters
Dimensions in Millimeters
+0.10
–0.05
Rev. A, November 2002