FDFMA2P857 Fairchild Semiconductor, FDFMA2P857 Datasheet - Page 6

• Manufacturer Part Number: FDFMA2P857
• Description: MOSFET P-CH 20V 3A MICROFET2X2
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDFMA2P857

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.3V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 435pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDFMA2P857TR

FDFMA2P857 Rev.B1
Typical Characteristics
0.01
0.1
1
1
10
-4
D = 0.5
DUTY CYCLE-DESCENDING ORDER
0.2
0.1
0.05
0.02
0.01
10
-3
SINGLE PULSE
R
θ
T
Figure 13. Transient Thermal Response Curve
JA = 173
A
= 25°C unless otherwise noted
10
o
C/W
-2
t, RECTANGULAR PULSE DURATION (s)
10
-1
6
10
0
NOTES:
DUTY FACTOR: D = t
PEAK T
10
J
= P
1
DM
x Z
P
θJA
DM
1
/t
x R
2
θJA
10
t
1
+ T
t
2
2
A
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10
3