NDT2955 Fairchild Semiconductor, NDT2955 Datasheet - Page 3

• Manufacturer Part Number: NDT2955
• Description: MOSFET P-CH 60V 2.5A SOT-223-4
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of NDT2955

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 601pF @ 30V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.3Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 2.5A
• Power Dissipation: 3W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.3 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 5.5 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.5 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 2.5A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 300mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: 2.6V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDT2955TR

Typical Characteristics
12
1.8
1.6
1.4
1.2
0.8
0.6
0.4
10
8
6
4
2
0
9
6
3
0
Figure 1. On-Region Characteristics.
1
2.5
-50
0
Figure 5. Transfer Characteristics.
Figure 3. On-Resistance Variation
V
GS
V
I
-7.0V
D
GS
= -10V
= -2.5A
V
-25
= -10V
DS
= -10V
1
-V
-V
withTemperature.
T
GS
DS
0
J
, JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
, DRAIN TO SOURCE VOLTAGE (V)
3.5
-6.0V
25
2
50
-5.0V
3
T
75
A
4.5
= -55
100
o
o
C
C)
-4.5V
4
125
125
-4.0V
25
o
C
o
C
150
5.5
5
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.35
0.25
0.15
0.05
0.01
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
0.3
0.2
0.1
0.1
1.8
1.6
1.4
1.2
0.8
10
1
2
1
2
0
0
Drain Current and Gate Voltage.
V
GS
V
=0V
GS
=-4.5V
Gate-to-Source Voltage.
0.2
-V
SD
T
A
-V
, BODY DIODE FORWARD VOLTAGE (V)
= 25
GS
3
4
T
A
, GATE TO SOURCE VOLTAGE (V)
-5.0V
= 125
o
C
0.4
-I
D
, DRAIN CURRENT (A)
o
C
T
-6.0V
A
= 125
0.6
6
6
25
o
o
C
C
-7.0V
0.8
-55
o
-8.0V
C
9
8
I
D
1
= -1.3A
NDT2955 Rev. C
-10V
1.2
12
10