FDC658AP Fairchild Optoelectronics Group, FDC658AP Datasheet - Page 4

• Manufacturer Part Number: FDC658AP
• Description: MOSFET P-CH SGL LL 30V 4A SSOT6
• Manufacturer: Fairchild Optoelectronics Group
• Series: PowerTrench®r

Specifications of FDC658AP

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 8.1nC @ 5V
• Input Capacitance (ciss) @ Vds: 470pF @ 15V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: SuperSOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC658APTR

FDC658AP Rev. B (W)
Typical Characteristics
Figure 9.
Figure 7.
0.01
100
0.1
10
10
8
6
4
2
0
1
0.001
0.1
0.01
0
0.1
0.00001
r
I
DS(on)
1
D
SINGLE PULSE
R
= -4A
θJA
V
Forward Bias Safe Operating Area
T
GS
A
LIMIT
= 156
= 25
D = 0.5
= -10V
Gate Charge Characteristics
0.2
0.1
2
0.05
o
o
-V
0.02
C
C/W
0.01
DS
, DRAIN TO SOURCE VOLTAGE (V)
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
0.0001
Q
1
SINGLE PULSE
g
, GATE CHARGE (nC)
4
Figure 11.
0.001
6
V
10
DS
= -5V
Transient Thermal Response Curve
8
-15V
t, RECTANGULAR PULSE DURATION
100us
100ms
1ms
10ms
1s
DC
0.01
-10V
100
10
4
Figure 8.
0.1
Figure 10.
600
450
300
150
10
8
6
4
2
0
0
0.01
0
Capacitance vs Drain to Source Voltage
C
1
rss
6
Single Pulse Maximum Power
-V
C
0.1
oss
DS
, DRAIN TO SOURCE VOLTAGE (V)
Dissipation
t, PULSE WIDTH (s)
10
12
C
iss
1
P(pk)
Duty Cycle, D = t
T
R
J
R
θJA
- T
θJA
18
(t) = r(t) + R
A
= 156
t
100
1
= P * R
t
2
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o
SINGLE PULSE
C/W
R
10
θJA
θJA
T
1
θJA
24
A
(t)
/ t
= 156°C/W
= 25°C
2
f = 1 MHz
V
GS
1000
= 0 V
100
30