QEE113 Fairchild Optoelectronics Group, QEE113 Datasheet

LED IR EMITTING 940NM SIDELOOKER

QEE113

Manufacturer Part Number
QEE113
Description
LED IR EMITTING 940NM SIDELOOKER
Manufacturer
Fairchild Optoelectronics Group
Datasheet

Specifications of QEE113

Current - Dc Forward (if)
50mA
Radiant Intensity (ie) Min @ If
3mW/sr @ 100mA
Wavelength
940nm
Voltage - Forward (vf) Typ
1.5V
Viewing Angle
50°
Orientation
Side View
Mounting Type
Through Hole
Package / Case
Radial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
QEE113QT
QEE113QT

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©2002 Fairchild Semiconductor Corporation
QEE113 Rev. 1.0.1
QEE113
Plastic Infrared Light Emitting Diode
Features
Package Dimensions
Notes:
1. Dimensions of all drawings are in inches (mm).
2. Tolerance is ±0.010 (0.25) on all non-nominal dimensions
Package Type = Sidelooker
Chip Material = GaAs
Matched Photosensor: QSE113
Medium Wide Emission Angle, 50°
Package Material: Clear Epoxy
High Output Power
Gray stripe on the top side
= 940nm
unless otherwise specified.
0.050 (1.27)
Ø0.095 (2.41)
0.020 (0.51) SQ.
0.087 (2.22)
CATHODE
PACKAGE DIMENSIONS
0.030 (0.76)
(2X)
0.100 (2.54)
0.175 (4.44)
0.100 (2.54)
NOM
ANODE
Ø0.065 (1.65)
0.500 (12.70)
0.200 (5.08)
MIN
Description
The QEE113 is a 940nm GaAs LED encapsulated in a
medium wide angle, plastic sidelooker package.
Schematic
CATHODE
ANODE
www.fairchildsemi.com
August 2008

Related parts for QEE113

QEE113 Summary of contents

Page 1

... Dimensions of all drawings are in inches (mm). 2. Tolerance is ±0.010 (0.25) on all non-nominal dimensions unless otherwise specified. ©2002 Fairchild Semiconductor Corporation QEE113 Rev. 1.0.1 Description The QEE113 is a 940nm GaAs LED encapsulated in a medium wide angle, plastic sidelooker package. 0.175 (4.44) Ø0.065 (1.65) 0.200 (5.08) 0.500 (12.70) ...

Page 2

... VF I Reverse Current R I Radiant Intensity E TC Temperature Coefficient IE t Rise Time r t Fall Time f C Junction Capacitance j ©2002 Fairchild Semiconductor Corporation QEE113 Rev. 1.0 25°C unless otherwise specified) A Parameter (2,3,4) (2,3) ( 25°C) A Test Conditions Min 20mA 100mA 100mA 20ms ...

Page 3

... PW Duty Cycle = 4% 3 2.5 2.0 1.5 1.0 10 100 I – FORWARD CURRENT (mA) F ©2002 Fairchild Semiconductor Corporation QEE113 Rev. 1.0.1 975 970 965 960 955 950 945 940 935 900 950 1,000 1,050 0 Fig. 4 Normalized Radient Intensity vs. Ambient Temperature 1.4 1.2 1 ...

Page 4

... Fig. 7 Radiation Diagram 90 100 110 120 130 140 150 160 170 180 1.0 0.8 0.6 0.4 0.2 0.0 ©2002 Fairchild Semiconductor Corporation QEE113 Rev. 1.0.1 (Continued) Fig. 8 Coupling Characteristics of QEE113 And QSE113 0.2 0 0.2 0.4 0.6 0.8 1.0 0.0 ...

Page 5

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Ful l Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation QEE113 Rev. 1.0.1 ® PowerTrench ® Programmable Active Droop™ SM ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...

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