QEC112 Fairchild Optoelectronics Group, QEC112 Datasheet

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QEC112

Manufacturer Part Number
QEC112
Description
LED IR EMITTING GAAS 940NM 3MM
Manufacturer
Fairchild Optoelectronics Group
Series
QEC11xr
Datasheet

Specifications of QEC112

Current - Dc Forward (if)
50mA
Radiant Intensity (ie) Min @ If
6mW/sr @100mA
Wavelength
940nm
Voltage - Forward (vf) Typ
1.5V
Viewing Angle
24°
Orientation
Top View
Mounting Type
Through Hole
Package / Case
T-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
QEC112 QEC113
Manufacturer:
ROHM
Quantity:
30 000
©2005 Fairchild Semiconductor Corporation
QEC112, QEC113 Rev. 1.0.2
QEC112, QEC113
Plastic Infrared Light Emitting Diode
Features
Package Dimensions
Notes:
1. Dimensions of all drawings are in inches (mm).
2. Tolerance is ±0.010 (.25) on all non-nominal dimensions
Chip material = GaAs
Package type: T-1 (3 mm)
Can be used with QSCXXX Photosensor
Narrow Emission Angle, 8° at 80% intensity
High Output Power
Package material and color: Clear, peach tinted plastic
REFERENCE
unless otherwise specified.
= 940nm
SURFACE
0.032 (0.082)
0.052 (1.32)
0.800 (20.3)
0.050 (1.27)
0.116 (2.95)
0.018 (0.46)
SQ. (2X)
PACKAGE DIMENSIONS
MIN
0.100 (2.54)
0.193 (4.90)
0.030 (0.76)
0.155 (3.94)
NOM
CATHODE
NOM
Description
The QEC11X is an 940nm GaAs LED encapsulated in a
clear peach tinted, plastic T-1 package.
Schematic
CATHODE
ANODE
www.fairchildsemi.com
August 2008

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QEC112 Summary of contents

Page 1

... Notes: 1. Dimensions of all drawings are in inches (mm). 2. Tolerance is ±0.010 (.25) on all non-nominal dimensions unless otherwise specified. ©2005 Fairchild Semiconductor Corporation QEC112, QEC113 Rev. 1.0.2 Description The QEC11X is an 940nm GaAs LED encapsulated in a clear peach tinted, plastic T-1 package. 0.193 (4.90) ...

Page 2

... Radiant Intensity QEC112 E I Radiant Intensity QEC113 E TC Temperature Coefficient IE t Rise Time r t Fall Time f C Junction Capacitance j ©2005 Fairchild Semiconductor Corporation QEC112, QEC113 Rev. 1.0 25°C unless otherwise specified) A Parameter (2,3,4) (2,3) ( 25°C) A Test Conditions Min 100mA 100mA ...

Page 3

... PW Duty Cycle = 4% 3 2.5 2.0 1.5 1.0 10 100 I – FORWARD CURRENT (mA) F ©2005 Fairchild Semiconductor Corporation QEC112, QEC113 Rev. 1.0.2 975 970 965 960 955 950 945 940 935 900 950 1,000 1,050 0 Fig. 4 Normalized Radient Intensity vs. Ambient Temperature 1.4 1 ...

Page 4

... Typical Performance Curves Fig. 7 Radiation Diagram 90 100 110 120 130 140 150 160 170 180 1.0 0.8 0.6 0.4 0.2 0.0 ©2005 Fairchild Semiconductor Corporation QEC112, QEC113 Rev. 1.0.2 (Continued) Fig. 8 Coupling Characteristics of QEC11X and QSC11X 0.2 0.4 0.6 ...

Page 5

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Ful l Production Obsolete Not In Production ©2005 Fairchild Semiconductor Corporation QEC112, QEC113 Rev. 1.0.2 ® PowerTrench ® Programmable Active Droop™ SM ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...

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