QSB363GR Fairchild Optoelectronics Group, QSB363GR Datasheet

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QSB363GR

Manufacturer Part Number
QSB363GR
Description
IC PHOTOTRANS IR 940NM 1.9MM GW
Manufacturer
Fairchild Optoelectronics Group
Datasheet

Specifications of QSB363GR

Current - Dc Forward (if)
100mA
Wavelength
940nm
Viewing Angle
24°
Orientation
Top View
Mounting Type
Surface Mount
Package / Case
T 3/4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Forward (vf) Typ
-
Radiant Intensity (ie) Min @ If
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
QSB363GR
Manufacturer:
FSC
Quantity:
4 000
Part Number:
QSB363GR
Manufacturer:
TOSHIBA
Quantity:
45 700
©2005 Fairchild Semiconductor Corporation
QSB363 Rev. 1.0.2
QSB363
Subminiature Plastic Silicon Infrared Phototransistor
Features
Package Dimensions
.118 (3.0)
.102 (2.6)
NOTES:
1. Dimensions are in inches (mm).
2. Tolerance of ± .010 (.25) on all non nominal dimensions
NPN Silicon Phototransistor
T-3/4 (2mm) Surface Mount Package
Medium Wide Beam Angle, 24°
Black Plastic Package
Matched Emitters: QEB363 or QEB373
0.024 (0.6)
0.016 (0.4)
unless otherwise specified.
0.008 (0.21)
0.004 (0.11)
0.074 (1.9)
0.276 (7.0)
MIN
0.106 (2.7)
0.091 (2.3)
.059 (1.5)
.051 (1.3)
0.019 (0.5)
0.012 (0.3)
0.024 (0.6)
EMITTER
0.087 (2.2)
0.071 (1.8)
1
Description
The QSB363 is a silicon phototransistor encapsulated in a black
infrared transparent T-3/4 package.
0.055 (1.4)
Daylight Filter
Tape & Reel Option (See Tape & Reel Specifications)
Lead Form Options: Gullwing, Yoke, Z-Bend
SCHEMATIC
COLLECTOR
EMITTER
November 2005
www.fairchildsemi.com

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QSB363GR Summary of contents

Page 1

QSB363 Subminiature Plastic Silicon Infrared Phototransistor Features NPN Silicon Phototransistor T-3/4 (2mm) Surface Mount Package Medium Wide Beam Angle, 24° Black Plastic Package Matched Emitters: QEB363 or QEB373 Package Dimensions 0.276 (7.0) MIN 0.024 (0.6) 0.016 (0.4) 0.074 (1.9) .118 ...

Page 2

Absolute Maximum Ratings Parameter Operating Temperature Storage Temperature (2,3,4) Soldering Temperature (Iron) (2,3) Soldering Temperature (Flow) Collector Emitter Voltage Emitter Collector Voltage (1) Power Dissipation Notes 1. Derate power dissipation linearly 1.33 mW/°C above 25°C. 2. RMA flux is recommended. ...

Page 3

Typical Performance Curves Fig. 1 Collector Power Dissipation vs. Ambient Temperature 100 - Ambient Temperature T Fig. 3 Relative Collector Current vs. Ambient Temperature 160 140 E ...

Page 4

Package Dimensions Features Three lead forming options: Gull Wing, Yoke and Z-Bend Compatible with automatic placement equipment Supplied on tape and reel or in bulk packaging Compatible with vapor phase reflow solder processes Gull Wing Lead Configuration 0.098±0.004 (2.5±0.1) ø0.075±0.008 ...

Page 5

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