QEB373 Fairchild Optoelectronics Group, QEB373 Datasheet

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QEB373

Manufacturer Part Number
QEB373
Description
LED IR EMITTING 940NM 2MM SMD
Manufacturer
Fairchild Optoelectronics Group
Datasheet

Specifications of QEB373

Current - Dc Forward (if)
100mA
Radiant Intensity (ie) Min @ If
16mW/sr @ 100mA
Wavelength
880nm
Voltage - Forward (vf) Typ
1.7V
Viewing Angle
24°
Orientation
Top View
Mounting Type
Surface Mount
Package / Case
T 3/4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2009 Fairchild Semiconductor Corporation
QEB373 Rev. 1.0.1
QEB373
Subminiature Plastic Infrared Emitting Diode
Features
Package Dimensions
Notes:
1. Dimensions are in inches (mm).
2. Tolerance of ±.010 (.25) on all non nominal dimensions unless otherwise specified.
.118 (3.0)
.102 (2.6)
T-3/4 (2mm) Surface Mount Package
Tape & Reel Option (See Tape & Reel Specifications)
Lead Form Options: Gullwing, Yoke, Z-Bend
Narrow Emission Angle, 24°
Wavelength = 880nm, AlGaAs
Clear Lens
Matched Photosensor: QSB363
High Radiant Intensity
0.024 (0.6)
0.016 (0.4)
0.008 (0.21)
0.004 (0.11)
0.074 (1.9)
0.276 (7.0)
MIN
0.106 (2.7)
0.091 (2.3)
.059 (1.5)
.051 (1.3)
0.019 (0.5)
0.012 (0.3)
0.024 (0.6)
CATHODE
0.087 (2.2)
0.071 (1.8)
0.055 (1.4)
Schematic
CATHODE
November 2009
www.fairchildsemi.com

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QEB373 Summary of contents

Page 1

... Notes: 1. Dimensions are in inches (mm). 2. Tolerance of ±.010 (.25) on all non nominal dimensions unless otherwise specified. ©2009 Fairchild Semiconductor Corporation QEB373 Rev. 1.0.1 CATHODE 0.087 (2.2) 0.071 (1.8) 0.019 (0.5) 0.012 (0.3) .059 (1.5) .051 (1.3) ...

Page 2

... Parameter Peak Emission Wavelength P Emission Angle V Forward Voltage F I Reverse Current R I Radiant Intensity e t Rise Time r t Fall Time f ©2009 Fairchild Semiconductor Corporation QEB373 Rev. 1.0 25°C unless otherwise specified) A Parameter (2,3,4) (2,3) ( 25°C) A Test Conditions I = 100mA 100mA 100mA 20ms ...

Page 3

... Fig. 3 Peak Emission Wavelength vs. Ambient Temperature 980 960 940 920 900 - Ambient Temperature T Fig. 5 Relative Radiant Flux vs. Ambient Temperature 0.5 0.2 0.1 - Ambient Temperature T ©2009 Fairchild Semiconductor Corporation QEB373 Rev. 1.0.1 Fig. 2 Relative Radiant Intensity vs 100 (˚ 100 (˚ 100 (˚ Wavelength 100 25˚ ...

Page 4

... Notes: (Applies to all package drawings) 1. Dimensions are in inches (mm). 2. Tolerance of ±.010 (.25) on all non nominal dimensions unless otherwise specified. ©2009 Fairchild Semiconductor Corporation QEB373 Rev. 1.0.1 Yoke Lead Configuration 0.098 (2.5) 0.016 (0.4) CATHODE 0.020 (0.5) 0.024 (0.6) ...

Page 5

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2009 Fairchild Semiconductor Corporation QEB373 Rev. 1.0.1 ® PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ...

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