FDN308P Fairchild Semiconductor, FDN308P Datasheet - Page 4

• Manufacturer Part Number: FDN308P
• Description: MOSFET P-CH 20V 1.5A SSOT-3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDN308P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 125 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 341pF @ 10V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.125 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1.5 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
5
4
3
2
1
0
0.01
100
0.1
Figure 9. Maximum Safe Operating Area.
10
0
1
Figure 7. Gate Charge Characteristics.
0.1
I
D
0.001
= -1.5A
R
0.01
SINGLE PULSE
DS(ON)
R
0.1
V
JA
0.0001
T
1
GS
A
= 270
LIMIT
= 25
=-4.5V
1
D = 0.5
o
0.2
o
C
0.1
C/W
0.05
-V
0.02
DS
0.01
, DRAIN-SOURCE VOLTAGE (V)
Q
1
SINGLE PULSE
g
, GATE CHARGE (nC)
DC
2
10s
0.001
1s
100ms
Figure 11. Transient Thermal Response Curve.
V
DS
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
3
= -5V
10ms
10
1ms
0.01
-15V
4
-10V
100
5
0.1
t
1
, TIME (sec)
500
400
300
200
100
20
15
10
5
0
0.001
0
Figure 8. Capacitance Characteristics.
0
C
Figure 10. Single Pulse Maximum
1
RSS
0.01
C
OSS
-V
Power Dissipation.
DS
5
, DRAIN TO SOURCE VOLTAGE (V)
0.1
10
t
1
, TIME (sec)
C
ISS
1
10
P(pk)
Duty Cycle, D = t
T
R
R
J
JA
- T
100
10
JA
(t) = r(t) + R
A
t
= 270 °C/W
1
= P * R
t
2
SINGLE PULSE
R
15
JA
T
A
100
= 270°C/W
= 25°C
FDN308P Rev B(W)
V
JA
f = 1MHz
1
GS
(t)
JA
/ t
= 0 V
2
1000
1000
20