FDG312P Fairchild Semiconductor, FDG312P Datasheet - Page 3

• Manufacturer Part Number: FDG312P
• Description: MOSFET P-CH 20V 1.2A SC70-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDG312P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 180 mOhm @ 1.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.2A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 330pF @ 10V
• Power - Max: 480mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.18 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 3.8 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.2 A
• Power Dissipation: 750 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Qualification Stress Test and Sample Size Detail
Device #1 2N7002
Package:
006
#Leads:
Precondition Description:
Pg. 3