FDG312P Fairchild Semiconductor, FDG312P Datasheet - Page 3
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FDG312P
Manufacturer Part Number
FDG312P
Description
MOSFET P-CH 20V 1.2A SC70-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDG312P.pdf
(5 pages)
Specifications of FDG312P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
180 mOhm @ 1.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.2A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
5nC @ 4.5V
Input Capacitance (ciss) @ Vds
330pF @ 10V
Power - Max
480mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.18 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
3.8 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
1.2 A
Power Dissipation
750 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDG312P
Manufacturer:
FAIRCHILD
Quantity:
30 000
Part Number:
FDG312P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics
4
3
2
1
0
6
5
4
3
2
1
0
0.5
0
1.6
1.4
1.2
0.8
0.6
V
1
Figure 1. On-Region Characteristics.
-50
Figure 5. Transfer Characteristics.
V
GS
Figure 3. On-Resistance Variation
DS
V
= -4.5V
I = -1.2A
D
GS
= -5V
-25
= -4.5V
-3.5V
-V
-3.0V
-V
1
GS
1
with Temperature.
DS
T , JUNCTION TEMPERATURE (°C)
-2.5V
, GATE TO SOURCE VOLTAGE (V)
0
J
, DRAIN-SOURCE VOLTAGE (V)
-2.0V
25
-1.5V
1.5
2
50
T = -55°C
J
75
100
3
2
125°C
125
25°C
150
2.5
4
0.001
0.5
0.4
0.3
0.2
0.1
0.01
0.1
0
10
2.4
2.2
1.8
1.6
1.4
1.2
0.8
1
1
0.2
2
1
with Drain Current and Gate Voltage.
0
Figure 6. Body Diode Forward Voltage
Figure 2. On-Resistance Variation
Figure 4. On-Resistance Variation
V
V
GS
GS
with Gate-to-Source Voltage.
= 0V
Variation with Source Current
= -2.0V
0.4
-V
1
SD
-V
GS
2
, BODY DIODE FORWARD VOLTAGE (V)
and Temperature.
, GATE TO SOURCE VOLTAGE (V)
T = 125°C
0.6
- I
J
2
D
-2.5V
, DRAIN CURRENT (A)
25°C
-55°C
0.8
3
-3.0V
3
-3.5V
1
4
-4.0V
4
T = 125°C
I = -0.6A
T = 25°C
J
D
J
1.2
5
-4.5V
FDG312P Rev. C
1.4
6
5