FDG332PZ Fairchild Semiconductor, FDG332PZ Datasheet
FDG332PZ
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FDG332PZ Summary of contents
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... JA R Thermal Resistance, Junction to Ambient Single operation JA Package Marking and Ordering Information Device Marking Device .2P FDG332PZ ©2008 Fairchild Semiconductor Corporation FDG332PZ Rev.B1 ® MOSFET General Description This P-Channel MOSFET uses Fairchild’s advanced low = -2.6A D voltage PowerTrench = -2.2A D battery power management applications. ...
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... Q Reverse Recovery Charge rr Notes determined with the device mounted on a 1in JA the user's board design. 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. ©2008 Fairchild Semiconductor Corporation FDG332PZ Rev. 25°C unless otherwise noted J Test Conditions I = -250 -250 A, referenced to 25°C ...
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... Junction Temperature 9 PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX 150 0.0 0.5 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2008 Fairchild Semiconductor Corporation FDG332PZ Rev. 25°C unless otherwise noted J 2.5 = -3V 2 -1. -1.5V 1.0 GS 0.5 1.2 1.6 2.0 300 250 200 150 ...
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... SINGLE PULSE T = MAX RATED 260 C 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 9. Forward Bias Safe Operating Area 100 V = -4. 0 ©2008 Fairchild Semiconductor Corporation FDG332PZ Rev. 25°C unless otherwise noted J 1000 V = -15V DD 100 100us 10 10 1ms 10 10 10ms 10 100ms 10s Figure 10 PULSE WIDTH (s) Figure 11 ...
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... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 0.1 SINGLE PULSE R 0. ©2008 Fairchild Semiconductor Corporation FDG332PZ Rev. 25°C unless otherwise noted 260 C RECTANGULAR PULSE DURATION (s) Figure 12. Transient Thermal Response Curve NOTES: DUTY FACTOR PEAK qJA qJA www.fairchildsemi.com ...
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... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...