FDV302P Fairchild Semiconductor, FDV302P Datasheet

FDV302P

Manufacturer Part Number

FDV302P

Description

MOSFET P-CH 25V 120MA SOT-23

Manufacturer

Fairchild Semiconductor

Datasheet

1.FDV302P.pdf (4 pages)

Specifications of FDV302P

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

10 Ohm @ 200mA, 4.5V

Drain To Source Voltage (vdss)

25V

Current - Continuous Drain (id) @ 25° C

120mA

Vgs(th) (max) @ Id

1.5V @ 250µA

Gate Charge (qg) @ Vgs

0.31nC @ 4.5V

Input Capacitance (ciss) @ Vds

11pF @ 10V

Power - Max

350mW

Mounting Type

Surface Mount

Package / Case

SOT-23-3, TO-236-3, Micro3™, SSD3, SST3

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

10 Ohm @ 4.5 V

Forward Transconductance Gfs (max / Min)

0.135 S

Drain-source Breakdown Voltage

25 V

Gate-source Breakdown Voltage

8 V

Continuous Drain Current

0.12 A

Power Dissipation

350 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

FDV302PTR

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Symbol

ESD

THERMAL CHARACTERISTICS

This P-Channel logic level enhancement mode field effect

transistor is produced using Fairchild's proprietary, high cell

density, DMOS technology. This very high density process is

especially tailored to minimize on-state resistance. This

device has been designed especially for low voltage

applications as a replacement for digital transistors. Since

bias resistors are not required, this one P-channel FET can

replace several digital transistors with different bias resistors

such as the DTCx and DCDx series.

Absolute Maximum Ratings

General Description

DSS

GSS

FDV302P

Digital FET, P-Channel

Mark:302

STG

SOT-23

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Maximum Power Dissipation

Operating and Storage Temperature Range

Electrostatic Discharge Rating MIL-STD-883D

Human Body Model (100pf / 1500 Ohm)

Thermal Resistance, Junction-to-Ambient

SuperSOT

-6

- Continuous

- Pulsed

= 25

C unless otherwise noted

SuperSOT

-8

Features

SO-8

-25 V, -0.12 A continuous, -0.5 A Peak.

Very low level gate drive requirements allowing direct

operation in 3V circuits. V

Gate-Source Zener for ESD ruggedness.

>6kV Human Body Model

Compact industry standard SOT-23 surface mount

package.

Replace many PNP digital transistors (DTCx and DCDx)

with one DMOS FET.

DS(ON)

-55 to 150

FDV302P

-0.12

0.35

= 13

= 10

-0.5

357

6.0

-25

-8

SOT-223

@ V

GS(th)

< 1.5V.

= -2.7 V

= -4.5 V.

October 1997

SOIC-16

FDV302P REV. F

Units

°C/W

°C

Related parts for FDV302P

FDV302P Summary of contents

Page 1

... Replace many PNP digital transistors (DTCx and DCDx) with one DMOS FET. TM SuperSOT -8 SO unless otherwise noted A October 1997 -2.7 V DS(ON -4.5 V. DS(ON) GS < 1.5V. GS(th) SOIC-16 SOT-223 FDV302P -25 -8 -0.12 -0.5 0.35 -55 to 150 6.0 357 FDV302P REV. F Units °C kV °C/W ...

Page 2

... Referenced -250 µ -2 - 1.0 MHz -0 -4 GEN - Min Typ Max - - 55°C J -100 o 1.9 C -0.65 -1 -1.5 10 =125° -0.05 0.135 0.22 0.31 0.11 0.04 -0.2 -1 -1.5 (Note) FDV302P REV. F Units µA µ ...

Page 3

... Figure 2. On-Resistance Variation with Drain Current and Gate Voltage -0.05A D 125 ° ,GATE TO SOURCE VOLTAGE (V) GS Gate-To- Source Voltage 125°C J 25°C -55°C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature. FDV302P REV. F -3.5 -4.5 0 1.2 ...

Page 4

... Figure 8. Capacitance Characteristics 0.001 Figure 10. Single Pulse Maximum Power 0.01 0 TIME (sec iss C oss C rss 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =357° C 25°C A 0.01 0 100 SINGLE PULSE TIME (SEC) Dissipation. R ( 357 °C/W JA P(pk ( Duty Cycle FDV302P REV 300 ...

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