FDV302P Fairchild Semiconductor, FDV302P Datasheet
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FDV302P
Specifications of FDV302P
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FDV302P Summary of contents
Page 1
... Replace many PNP digital transistors (DTCx and DCDx) with one DMOS FET. TM SuperSOT -8 SO unless otherwise noted A October 1997 -2.7 V DS(ON -4.5 V. DS(ON) GS < 1.5V. GS(th) SOIC-16 SOT-223 FDV302P -25 -8 -0.12 -0.5 0.35 -55 to 150 6.0 357 FDV302P REV. F Units °C kV °C/W ...
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... Referenced -250 µ -2 - 1.0 MHz -0 -4 GEN - Min Typ Max - - 55°C J -100 o 1.9 C -0.65 -1 -1.5 10 =125° -0.05 0.135 0.22 0.31 0.11 0.04 -0.2 -1 -1.5 (Note) FDV302P REV. F Units µA µ ...
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... Figure 2. On-Resistance Variation with Drain Current and Gate Voltage -0.05A D 125 ° ,GATE TO SOURCE VOLTAGE (V) GS Gate-To- Source Voltage 125°C J 25°C -55°C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature. FDV302P REV. F -3.5 -4.5 0 1.2 ...
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... Figure 8. Capacitance Characteristics 0.001 Figure 10. Single Pulse Maximum Power 0.01 0 TIME (sec iss C oss C rss 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =357° C 25°C A 0.01 0 100 SINGLE PULSE TIME (SEC) Dissipation. R ( 357 °C/W JA P(pk ( Duty Cycle FDV302P REV 300 ...