BSS84 Fairchild Semiconductor, BSS84 Datasheet - Page 3

• Manufacturer Part Number: BSS84
• Description: MOSFET P-CH 50V 130MA SOT-23
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of BSS84

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 Ohm @ 100mA, 5V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 130mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 1.3nC @ 5V
• Input Capacitance (ciss) @ Vds: 73pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 10 Ohm @ 5 V
• Forward Transconductance Gfs (max / Min): 0.6 S
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.13 A
• Power Dissipation: 360 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 10Ohm
• Drain-source On-volt: 50V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Dc: 1205
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS84TR

Typical Characteristics
0.8
0.6
0.4
0.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.8
0.6
0.4
0.2
1
0
Figure 3. On-Resistance Variation with
1
1
0
Figure 1. On-Region Characteristics.
-50
0
1
Figure 5. Transfer Characteristics.
I
V
D
V
V
GS
GS
= -0.10A
-25
DS
= -5V
= -5V
1.5
= -5V
1
-V
-V
T
DS
0
GS
J
, JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
Temperature.
-4.5V
2
25
2
-3.5V
2.5
50
T
A
3
= -55
75
-3.0V
3
o
C
-2.5V
o
100
C)
125
4
3.5
o
C
125
25
o
C
150
4
5
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.01
1.8
1.6
1.4
1.2
0.8
0.1
Figure 2. On-Resistance Variation with
5
4
3
2
1
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
2
1
1
0.0
2
0
V
Drain Current and Gate Voltage.
GS
= 0V
T
A
V
GS
= 25
2.5
Gate-to-Source Voltage.
0.2
-V
=-3.0V
0.2
SD
o
C
-V
, BODY DIODE FORWARD VOLTAGE (V)
GS
T
, GATE TO SOURCE VOLTAGE (V)
-3.5V
A
-I
0.4
3
= 125
D
, DRAIN CURRENT (A)
0.4
T
o
A
C
-4.0V
= 125
3.5
0.6
o
25
C
o
0.6
C
-4.5V
0.8
4
-55
o
I
D
C
0.8
= -0.05A
4.5
1.0
-5.0V
BSS84 Rev B(W)
1.2
1
5