FDV301N Fairchild Semiconductor, FDV301N Datasheet - Page 10

• Manufacturer Part Number: FDV301N
• Description: MOSFET N-CH 25V 220MA SOT-23
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of FDV301N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 220mA
• Vgs(th) (max) @ Id: 1.06V @ 250µA
• Gate Charge (qg) @ Vgs: 0.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 9.5pF @ 10V
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 4Ohm
• Drain-source On-volt: 25V
• Gate-source Voltage (max): 8V
• Drain Current (max): 500mA
• Power Dissipation: 350mW
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 0.2 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 0.5 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDV301NTR

HAST2
HTSL
SOPL1
TMCL1
Device #19 NC7SBU3157P6X
Package:
#Leads:
Precondition Description:
Stress
PCNL1A
Environment Stress Detail:
Stress
GATE+
GATE-
HAST2
HTSL
SOPL1
TMCL1
Device #20 NC7SZ125M5
Package:
#Leads:
Precondition Description:
Stress
PCNL1A
Environment Stress Detail:
Stress
SOPL1
THBT
TMCL1
Device #21 NC7SZ125M5X
Package:
#Leads:
Precondition Description:
Stress
PCNL1A
Environment Stress Detail:
Stress
GATE+
X
X
P/C
X
X
P/C
X
X
P/C
006
006
006
P/C
P/C
P/C
JESD22-A110 85%RH, 110C,
JESD22-A103 150C
JESD22-A108 150C, 5V
JESD22-A104 -65C, 150C
Standard
AEC-Q100-006 155C, 400V
AEC-Q100-006 155C, -400V
JESD22-A110 85%RH, 110C,
JESD22-A103 150C
JESD22-A108 150C, 5V
JESD22-A104 -65C, 150C
Standard
JESD22-A108 150C, 5V
JESD22-A101 85%RH, 85C, 5V 168
JESD22-A104 -65C, 150C
Standard
AEC-Q100-006 155C, 400V
Standard
JESD22-A113
Standard
JESD22-A113
Standard
JESD22-A113
0V
Conditions
0V
Conditions
Conditions
Conditions
Conditions
Conditions
264
168
168
100
Readpoints
TP1
1
1
264
168
168
100
Readpoints
TP1
168
100
Readpoints
TP1
1
500
500
500
TP2
500
500
500
TP2
500
500
500
TP2
1000
1000
TP3
1000
1000
TP3
1000
1000
TP3
Read-
points
Read-
points
Read-
points
45
77
77
77
Samples
A
3
3
45
77
77
77
Samples
A
77
77
77
Samples
A
3
Sample
Sample
Sample
A
A
A
0
0
0
45
77
77
77
Pg. 10