FDMS8670 Fairchild Semiconductor, FDMS8670 Datasheet - Page 2

• Manufacturer Part Number: FDMS8670
• Description: MOSFET N-CH 30V 24A POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMS8670

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.6 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 3940pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, Power56
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 42 A
• Power Dissipation: 78000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS8670TR

©2009 Fairchild Semiconductor Corporation
FDMS8670 Rev.C1
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
NOTES:
1. R
2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%.
3. Starting T
BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
DS(on)
FS
the user's board design.
BV
GS(th)
SD
iss
oss
rss
g
g
g
gs
gd
rr
V
Symbol
DSS
T
T
JA
GS(th)
DSS
J
J
is determined with the device mounted on a 1in
J
= 25
°
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C, L = 1mH, I
AS
= 24A, V
Parameter
DD
= 27V, V
2
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
GS
J
= 25°C unless otherwise noted
= 10V.
a. 50°C/W when mounted on a
1 in
2
pad of 2 oz copper.
V
V
V
V
V
f = 1MHz
f = 1MHz
I
I
V
V
V
I
V
V
V
V
V
V
I
D
D
D
F
DS
DD
GS
GS
GS
GS
GS
GS
GS
GS
GS
DD
GS
GS
= 24A, di/dt = 100A/ s
= 250 A, V
= 250 A, referenced to 25°C
= 250 A, referenced to 25°C
= 0V to 10V
= 15V, I
= 10V, R
= 0V to 5V
= 0V, V
= 15V, V
= 0V, I
= 0V, I
= ±20V, V
= V
= 10V, I
= 4.5V, I
= 10V, I
= 5V, I
2
DS
Test Conditions
, I
S
S
D
DS
D
= 24A
= 2.1A
D
D
D
GS
GEN
D
= 24A
GS
= 24A,
DS
= 24A
= 24A, T
= 24V,
= 250 A
= 18A
= 0V,
= 0V
= 0V
= 6
V
I
DD
D
= 24A
J
= 15V,
= 125°C
(Note 2)
(Note 2)
JC
is guaranteed by design while R
Min
1.0
30
b. 125°C/W when mounted on a
minimum pad of 2 oz copper.
2965
1395
19.5
Typ
-5.9
117
180
1.7
2.1
3.0
3.0
1.3
8.3
0.8
0.7
5.7
14
33
45
23
44
27
5
4
3940
1855
±100
Max
265
3.0
2.6
3.8
3.8
1.3
1.2
24
10
53
10
63
33
71
43
CA
www.fairchildsemi.com
1
is determined by
mV/°C
mV/°C
Units
m
nA
pF
pF
pF
nC
nC
nC
nC
nC
ns
ns
ns
ns
ns
V
V
V
S
A