FDB3502 Fairchild Semiconductor, FDB3502 Datasheet - Page 2

• Manufacturer Part Number: FDB3502
• Description: MOSFET N-CH 75V 6A TO-263AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB3502

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 47 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 815pF @ 40V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.047 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDB3502TR

©2008 Fairchild Semiconductor Corporation
FDB3502 Rev.C2
Notes:
1: R
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting T
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
∆BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
∆V
d(on)
r
d(off)
f
rr
DS(on)
FS
GS(th)
SD
∆T
∆T
iss
oss
rss
g
R
g
gs
gd
rr
a
b
Symbol
θJA
θJC
DSS
.
.
GS(th)
40°C/W when mounted on a 1 in
62.5°C/W when mounted
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R
J
= 25
°
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Gate to Source Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C, L = 3mH, I
AS
on a minimum pad.
= 6A, V
2
Parameter
θJA
pad of 2 oz copper
DD
is determined by the user’s board design.
= 75V, V
GS
T
J
= 10V.
= 25°C unless otherwise noted
V
V
V
I
V
I
V
V
V
V
f = 1MHz
f = 1MHz
I
I
V
V
V
V
I
D
D
D
D
F
GS
GS
GS
DD
DS
DD
GS
DD
GS
GS
GS
GS
= 6A
= 6A, di/dt = 100A/µs
= 250µA, referenced to 25°C
= 250µA, V
= 250µA, referenced to 25°C
= 40V, I
= 10V, R
= 40V
= 0V, V
= V
= 10V, I
= 10V, I
= 10V, I
= 40V, V
= 0V, I
= 0V, I
= ±20V, V
2
DS
Test Conditions
, I
S
S
DS
D
D
D
D
= 2.6A
= 6A
D
GS
GEN
GS
= 6A,
DS
= 6A
= 6A, T
= 6A
= 250µA
= 60V,
= 0V,
= 0V
= 0V
= 6Ω
J
= 125°C
(Note 2)
(Note 2)
Min
2.5
75
0.78
0.83
Typ
615
1.5
3.8
-10
75
35
13
25
17
37
63
13
11
70
9
3
3
4
3
Max
±100
815
105
1.2
1.3
4.5
40
17
10
22
10
15
41
32
47
80
www.fairchildsemi.com
1
mV/°C
mV/°C
Units
mΩ
pF
pF
pF
nC
nC
nC
nC
ns
µA
nA
ns
ns
ns
ns
Ω
V
V
S
V