FDC3612 Fairchild Semiconductor, FDC3612 Datasheet
FDC3612
Manufacturer Part Number
FDC3612
Description
MOSFET N-CH 100V 2.6A SSOT-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDC3612.pdf
(5 pages)
Specifications of FDC3612
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
125 mOhm @ 2.6A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
2.6A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
660pF @ 50V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Configuration
Single Quad Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.125 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
10 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.6 A
Power Dissipation
1600 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDC3612
FDC3612TR
FDC3612TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDC3612
Manufacturer:
Fairchild Semiconductor
Quantity:
33 492
Part Number:
FDC3612
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDC3612-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDC3612
100V N-Channel PowerTrench
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
Applications
• DC/DC converter
2002 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
θJA
θJC
, T
Device Marking
STG
N-Channel
.362
SuperSOT -6
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
MOSFET
DS(ON)
D
D
and fast switching speed.
TM
S
– Continuous
– Pulsed
has
FDC3612
Device
Parameter
D
been
D
G
designed
T
A
=25
MOSFET
o
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
Features
• 2.6 A, 100 V
• High performance trench technology for extremely
• Low gate charge (14nC typ)
• High power and current handling capability
• Fast switching speed
low R
DS(ON)
1
2
3
Tape width
–55 to +150
8mm
R
R
Ratings
DS(ON)
DS(ON)
± 20
100
2.6
1.6
0.8
20
78
30
= 125 mΩ @ V
= 135 mΩ @ V
February 2002
6
5
4
FDC3612 Rev B3 (W)
3000 units
Quantity
GS
GS
= 10 V
= 6 V
Units
°C/W
°C/W
°C
W
V
V
A
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Datasheet:
FDC3612 Summary of contents
Page 1
... C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1a) (Note 1) Reel Size 7’’ February 2002 R = 125 mΩ DS(ON 135 mΩ DS(ON Ratings Units 100 V ± 2 1.6 W 0.8 –55 to +150 °C 78 °C/W 30 °C/W Tape width Quantity 8mm 3000 units FDC3612 Rev B3 (W) ...
Page 2
... GS GEN 2 1.3 A (Note 2 100 A/µs (Note determined by the user's board design. Min Typ Max Units =2 2.6 A 100 V 99 mV/°C 10 µA 100 nA –100 – 6 mV/°C 86 125 mΩ 91 135 157 240 660 3 3.7 7 2.3 nC 3.6 nC 1.3 A 0.76 1 FDC3612 Rev B3(W) ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 4.0V 4.5V 5.0V 6.0V 10V DRAIN CURRENT ( 1. 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC3612 Rev B3( 1.2 ...
Page 4
... Figure 10. Single Pulse Maximum 0.01 0 1MHz ISS OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 156°C/W θ 25°C A 0.01 0 TIME (sec) 1 Power Dissipation. R ( θJA θ 156 °C/W θJA P(pk θ Duty Cycle 100 FDC3612 Rev B3(W) 100 100 ( 1000 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...