FDC3612 Fairchild Semiconductor, FDC3612 Datasheet
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FDC3612
Specifications of FDC3612
FDC3612TR
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FDC3612 Summary of contents
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... C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1a) (Note 1) Reel Size 7’’ February 2002 R = 125 mΩ DS(ON 135 mΩ DS(ON Ratings Units 100 V ± 2 1.6 W 0.8 –55 to +150 °C 78 °C/W 30 °C/W Tape width Quantity 8mm 3000 units FDC3612 Rev B3 (W) ...
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... GS GEN 2 1.3 A (Note 2 100 A/µs (Note determined by the user's board design. Min Typ Max Units =2 2.6 A 100 V 99 mV/°C 10 µA 100 nA –100 – 6 mV/°C 86 125 mΩ 91 135 157 240 660 3 3.7 7 2.3 nC 3.6 nC 1.3 A 0.76 1 FDC3612 Rev B3(W) ...
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... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 4.0V 4.5V 5.0V 6.0V 10V DRAIN CURRENT ( 1. 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC3612 Rev B3( 1.2 ...
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... Figure 10. Single Pulse Maximum 0.01 0 1MHz ISS OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 156°C/W θ 25°C A 0.01 0 TIME (sec) 1 Power Dissipation. R ( θJA θ 156 °C/W θJA P(pk θ Duty Cycle 100 FDC3612 Rev B3(W) 100 100 ( 1000 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...