FDZ197PZ Fairchild Semiconductor, FDZ197PZ Datasheet

MOSFET P-CH 20V 3.8A 6-WLCSP

FDZ197PZ

Manufacturer Part Number
FDZ197PZ
Description
MOSFET P-CH 20V 3.8A 6-WLCSP
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDZ197PZ

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
64 mOhm @ 2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.8A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 4.5V
Input Capacitance (ciss) @ Vds
1570pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
6-WLCSP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDZ197PZTR
©2009 Fairchild Semiconductor Corporation
FDZ197PZ Rev.C1
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDZ197PZ
P-Channel 1.5 V Specified PowerTrench
-20 V, -3.8 A, 64 mΩ
Features
V
V
I
P
T
R
R
D
J
DS
GS
D
θJA
θJA
Max r
Max r
Max r
Max r
Occupies only 1.5 mm
area of 2 x 2 BGA
Ultra-thin package: less than 0.65 mm height when mounted
to PCB
HBM ESD protection level > 4400V (Note3)
RoHS Compliant
, T
Symbol
Device Marking
STG
DS(on)
DS(on)
DS(on)
DS(on)
7
= 64 mΩ at V
= 71 mΩ at V
= 79 mΩ at V
= 95 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
TOP
2
of PCB area.Less than 50% of the
GS
GS
GS
GS
= -4.5 V, I
= -2.5 V, I
= -1.8 V, I
= -1.5 V, I
-Continuous
-Pulsed
FDZ197PZ
Device
WL-CSP 1x1.5 Thin
D
D
D
D
= -2.0 A
= -2.0 A
= -1.0 A
= -1.0 A
T
A
= 25 °C unless otherwise noted
Parameter
WL-CSP 1x1.5 Thin
D
Package
BOTTOM
1
S
D
T
T
T
General Description
Designed on Fairchild's advanced 1.5 V PowerTrench
with state of the art "fine pitch" WLCSP packaging process, the
FDZ197PZ minimizes both PCB space and r
advanced WLCSP MOSFET embodies a breakthrough in
packaging technology which enables the device to combine
excellent thermal transfer characteristics, ultra-low profile
packaging, low gate charge, and low r
Applications
A
A
A
= 25°C
= 25°C
= 25°C
Battery management
Load switch
Battery protection
S
S
®
G
Thin WL-CSP MOSFET
Reel Size
7 ”
PIN1
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
Tape Width
8 mm
-55 to +150
Ratings
DS(on)
-3.8
133
-20
-15
1.9
0.9
±8
65
.
www.fairchildsemi.com
June 2009
5000 units
Quantity
DS(on)
®
process
Units
°C/W
. This
°C
W
V
V
A

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FDZ197PZ Summary of contents

Page 1

... General Description = -2.0 A Designed on Fairchild's advanced 1.5 V PowerTrench D with state of the art "fine pitch" WLCSP packaging process, the = -2 FDZ197PZ minimizes both PCB space and r = -1.0 A advanced WLCSP MOSFET embodies a breakthrough in D packaging technology which enables the device to combine = -1 excellent thermal transfer characteristics, ultra-low profile ...

Page 2

... Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied. ©2009 Fairchild Semiconductor Corporation FDZ197PZ Rev. °C unless otherwise noted J Test Conditions = -250 µ ...

Page 3

... Junction Temperature 15 µ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 0.0 0.5 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDZ197PZ Rev. °C unless otherwise noted J µ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 100 125 150 0. - 0.001 1 ...

Page 4

... J 0.1 0.01 0 TIME IN AVALANCHE (ms) AV Figure 9. Unclamped Inductive Switching Capability - 125 GATE TO SOURCE VOLTAGE ( Figure 11. Gate Leakage Current vs Gate to Source Voltage ©2009 Fairchild Semiconductor Corporation FDZ197PZ Rev. °C unless otherwise noted J 3000 1000 100 0.1 0.01 10 100 1000 200 100 0 MHz ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.1 0.01 0.01 0.005 - ©2009 Fairchild Semiconductor Corporation FDZ197PZ Rev. °C unless otherwise noted J SINGLE PULSE 133 C/W θ RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve NOTES: DUTY FACTOR ...

Page 6

... Fairchild Semiconductor Corporation FDZ197PZ Rev.C1 6 www.fairchildsemi.com ...

Page 7

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2009 Fairchild Semiconductor Corporation FDZ197PZ Rev.C1 F-PFS™ PowerTrench ® FRFET PowerXS™ SM Global Power Resource Programmable Active Droop™ ® Green FPS™ ...

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