STW34NB20 STMicroelectronics, STW34NB20 Datasheet - Page 8

• Manufacturer Part Number: STW34NB20
• Description: MOSFET N-CH 200V 34A TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STW34NB20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 75 mOhm @ 17A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 34A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 3300pF @ 25V
• Power - Max: 180W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.075 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 17 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 34 A
• Power Dissipation: 180000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Current, Drain: 34 A
• Gate Charge, Total: 60 nC
• Package Type: TO-247
• Polarization: N-Channel
• Resistance, Drain To Source On: 0.062 Ohm
• Temperature, Operating, Maximum: +150 °C
• Time, Turn-off Delay: 17 ns
• Time, Turn-on Delay: 30 ns
• Transconductance, Forward: 17 S
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Forward, Diode: 1.5 V
• Voltage, Gate To Source: ±30 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2659-5

STW34NB20
PACKAGE MECHANICAL
Table 12. TO-247 Mechanical Data
Figure 19. TO-247 Package Dimensions
Note: Drawing is not to scale.
8/10
Symbol
ØR
ØP
A1
b1
b2
L1
L2
A
D
E
S
b
e
L
c
19.85
15.45
14.20
4.85
2.20
0.40
3.70
3.55
4.50
Min
1.0
2.0
3.0
millimeters
18.50
5.45
5.50
Typ
20.15
15.75
14.80
Max
5.15
2.60
1.40
2.40
3.40
0.80
4.30
3.65
5.50
0.086
0.039
0.079
0.118
0.015
0.781
0.608
0.560
0.140
0.177
0.19
0.14
Min
inches
0.214
0.728
0.216
Typ
0.102
0.055
0.143
0.216
0.094
0.134
0.793
0.620
0.582
Max
0.20
0.03
0.17