STW34NB20 STMicroelectronics, STW34NB20 Datasheet - Page 2

• Manufacturer Part Number: STW34NB20
• Description: MOSFET N-CH 200V 34A TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STW34NB20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 75 mOhm @ 17A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 34A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 3300pF @ 25V
• Power - Max: 180W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.075 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 17 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 34 A
• Power Dissipation: 180000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Current, Drain: 34 A
• Gate Charge, Total: 60 nC
• Package Type: TO-247
• Polarization: N-Channel
• Resistance, Drain To Source On: 0.062 Ohm
• Temperature, Operating, Maximum: +150 °C
• Time, Turn-off Delay: 17 ns
• Time, Turn-on Delay: 30 ns
• Transconductance, Forward: 17 S
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Forward, Diode: 1.5 V
• Voltage, Gate To Source: ±30 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2659-5

STW34NB20
Table 3. Absolute Maximum Ratings
Note: 1. Pulse width limited by safe operating area
Table 4. Thermal Data
Table 5. Avalanche Characteristics
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Symbol
Symbol
R
R
Symbol
I
V
DM
thj-case
V
V
thj-amb
P
T
E
DGR
I
I
I
T
T
GS
DS
stg
AR
D
D
tot
AS
j
l
(1)
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (cont.) at T
Drain Current (cont.) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
j
= 25 °C; I
Parameter
Parameter
C
Parameter
D
GS
= 25 °C
= I
GS
C
C
j
= 20 kΩ)
max, δ < 1%)
AR
= 25 °C
= 100 °C
= 0)
; V
DD
= 50 V)
Max
Max
Max Value
-65 to 150
Value
Value
± 30
1.44
0.69
200
200
136
180
150
300
650
34
21
30
34
W°/C
°C/W
°C/W
Unit
Unit
Unit
mJ
°C
°C
°C
W
A
A
V
V
V
A
A