STW34NB20 STMicroelectronics, STW34NB20 Datasheet - Page 10

MOSFET N-CH 200V 34A TO-247

STW34NB20

Manufacturer Part Number
STW34NB20
Description
MOSFET N-CH 200V 34A TO-247
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheets

Specifications of STW34NB20

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
75 mOhm @ 17A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
34A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
80nC @ 10V
Input Capacitance (ciss) @ Vds
3300pF @ 25V
Power - Max
180W
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.075 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
17 S
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
34 A
Power Dissipation
180000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Current, Drain
34 A
Gate Charge, Total
60 nC
Package Type
TO-247
Polarization
N-Channel
Resistance, Drain To Source On
0.062 Ohm
Temperature, Operating, Maximum
+150 °C
Time, Turn-off Delay
17 ns
Time, Turn-on Delay
30 ns
Transconductance, Forward
17 S
Voltage, Breakdown, Drain To Source
200 V
Voltage, Forward, Diode
1.5 V
Voltage, Gate To Source
±30 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2659-5

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STW34NB20
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