STW34NB20 STMicroelectronics, STW34NB20 Datasheet

MOSFET N-CH 200V 34A TO-247

STW34NB20

Manufacturer Part Number
STW34NB20
Description
MOSFET N-CH 200V 34A TO-247
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheets

Specifications of STW34NB20

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
75 mOhm @ 17A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
34A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
80nC @ 10V
Input Capacitance (ciss) @ Vds
3300pF @ 25V
Power - Max
180W
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.075 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
17 S
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
34 A
Power Dissipation
180000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Current, Drain
34 A
Gate Charge, Total
60 nC
Package Type
TO-247
Polarization
N-Channel
Resistance, Drain To Source On
0.062 Ohm
Temperature, Operating, Maximum
+150 °C
Time, Turn-off Delay
17 ns
Time, Turn-on Delay
30 ns
Transconductance, Forward
17 S
Voltage, Breakdown, Drain To Source
200 V
Voltage, Forward, Diode
1.5 V
Voltage, Gate To Source
±30 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2659-5

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Price
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Table 1. General Features
FEATURES SUMMARY
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
R
capabilities and unrivalled gate charge and switch-
ing characteristics.
APPLICATIONS
Table 2. Order Codes
April 2004
DS(on)
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
HIGH CURRENT, HIGH SPEED SWITCHING
STW34NB20
Part Number
Type
STW34NB20
per area, exceptional avalanche and dv/dt
DS(on)
200 V
V
= 0.062 Ω
DSS
< 0.075 Ω
R
W34NB20
DS(on)
Marking
N-CHANNEL 200V - 0.062 Ω - 34A TO-247
34 A
I
D
Figure 1. Package
Figure 2. Internal Schematic Diagram
Package
TO-247
PowerMESH™ MOSFET
TO-247
STW34NB20
1
Packaging
2
TUBE
3
REV. 2
1/10

Related parts for STW34NB20

STW34NB20 Summary of contents

Page 1

... HIGH CURRENT, HIGH SPEED SWITCHING ■ Table 2. Order Codes Part Number STW34NB20 April 2004 N-CHANNEL 200V - 0.062 Ω - 34A TO-247 Figure 1. Package R I DS(on Figure 2. Internal Schematic Diagram Marking Package TO-247 W34NB20 STW34NB20 PowerMESH™ MOSFET TO-247 Packaging TUBE REV. 2 1/10 ...

Page 2

... STW34NB20 Table 3. Absolute Maximum Ratings Symbol V Drain-source Voltage ( Drain- gate Voltage (R DGR V Gate-source Voltage GS I Drain Current (cont Drain Current (cont (1) Drain Current (pulsed Total Dissipation at T tot Derating Factor T Storage Temperature stg T Max. Operating Junction Temperature j Note: 1. Pulse width limited by safe operating area Table 4 ...

Page 3

... Test Conditions = 4.7 Ω 100 (see test circuit, Figure 16 160 Test Conditions = 4.7 Ω 160 (see test circuit, Figure 18) GS STW34NB20 Min. Typ. Max. Unit 200 V µA 1 µA 10 ± 100 nA Min. Typ. Max. Unit Ω 0.062 0.075 Min. Typ. Max. Unit 8 ...

Page 4

... STW34NB20 Table 11. Source Drain Diode Symbol Parameter I Source-drain Current SD (1) Source-drain Current I SDM (pulsed) (2) Forward On Voltage Reverse Recovery Time rr Q Reverse RecoveryCharge rr I Reverse RecoveryCharge RRAM Note: 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Figure 3 ...

Page 5

... Figure 7. Transconductance Figure 9. Gate Charge vs Gate-source Voltage Figure 11. Normalized Gate Thresold Voltage vs Temperature Figure 8. Static Drain-source On Resistance Figure 10. Capacitance Variations Figure 12. Normalized On Resistance vs Temperature STW34NB20 5/10 ...

Page 6

... STW34NB20 Figure 13. Source-drain Diode Forward Characteristics 6/10 ...

Page 7

... Figure 14. Unclamped Inductive Load Test Circuit Figure 16. Switching Times Test Circuits For Resistive Load Figure 18. Test Circuit For Inductive Load Switching And Diode Recovery Times Figure 15. Unclamped Inductive Waveforms Figure 17. Gate Charge Test Circuit STW34NB20 7/10 ...

Page 8

... STW34NB20 PACKAGE MECHANICAL Table 12. TO-247 Mechanical Data Symbol Min A 4.85 A1 2.20 b 1.0 b1 2.0 b2 3.0 c 0.40 D 19.85 E 15. 14.20 L1 3.70 L2 ØP 3.55 ØR 4.50 S Figure 19. TO-247 Package Dimensions Note: Drawing is not to scale. 8/10 millimeters Typ Max 5.15 2.60 1.40 2.40 3.40 0.80 20 ...

Page 9

... REVISION HISTORY Table 13. Revision History Date Revision January-1998 1 14-Apr-2004 2 Description of Changes First Issue Stylesheet update. No content change. STW34NB20 9/10 ...

Page 10

... STW34NB20 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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