STW34NB20 STMicroelectronics, STW34NB20 Datasheet - Page 4

• Manufacturer Part Number: STW34NB20
• Description: MOSFET N-CH 200V 34A TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STW34NB20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 75 mOhm @ 17A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 34A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 3300pF @ 25V
• Power - Max: 180W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.075 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 17 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 34 A
• Power Dissipation: 180000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Current, Drain: 34 A
• Gate Charge, Total: 60 nC
• Package Type: TO-247
• Polarization: N-Channel
• Resistance, Drain To Source On: 0.062 Ohm
• Temperature, Operating, Maximum: +150 °C
• Time, Turn-off Delay: 17 ns
• Time, Turn-on Delay: 30 ns
• Transconductance, Forward: 17 S
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Forward, Diode: 1.5 V
• Voltage, Gate To Source: ±30 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2659-5

STW34NB20
Table 11. Source Drain Diode
Note: 1. Pulse width limited by safe operating area
Figure 3. Safe Operating Area
Figure 5. Output Characteristics
4/10
Symbol
I
V
SDM
I
RRAM
SD
I
Q
SD
t
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
rr
rr
(2)
(1)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Reverse RecoveryCharge
Parameter
I
V
(see test circuit, Figure 18)
I
SD
SD
DD
= 34 A; V
= 34 A; di/dt = 100 A/µs
= 50 V; T
Test Conditions
GS
j
= 150 °C
= 0
Figure 4. Thermal Impedance
Figure 6. Transfer Characteristics
Min.
Typ.
Max.
18.5
136
290
1.5
2.7
34
Unit
µC
ns
A
A
V
A