FCP4N60 Fairchild Semiconductor, FCP4N60 Datasheet

MOSFET N-CH 600V 3.9A TO-220

FCP4N60

Manufacturer Part Number
FCP4N60
Description
MOSFET N-CH 600V 3.9A TO-220
Manufacturer
Fairchild Semiconductor
Series
SuperFET™r
Datasheet

Specifications of FCP4N60

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.2 Ohm @ 2A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
3.9A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
16.6nC @ 10V
Input Capacitance (ciss) @ Vds
540pF @ 25V
Power - Max
50W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.2 m Ohms
Forward Transconductance Gfs (max / Min)
3.2 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3.9 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
3.9A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
1ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
5V
Rohs Compliant
Yes
Fall Time
30 ns
Rise Time
45 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FCP4N60
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2008 Fairchild Semiconductor Corporation
FCP4N60 Rev. A1
FCP4N60
600V N-Channel MOSFET
Features
• 650V @T
• Typ. R
• Ultra low gate charge (typ. Q
• Low effective output capacitance (typ. C
• 100% avalanche tested
Absolute Maximum Ratings
Thermal Characteristics
• RoHS Compliant
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
J,
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θJA
T
STG
DS(on)
J
= 150°C
= 1.0Ω
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Operating and Storage Temperature Range
g
= 12.8nC)
G
D
S
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25°C
Parameter
Parameter
C
oss
= 25°C)
.eff = 32pF)
TO-220
FCP Series
C
C
= 25°C)
= 100°C)
1
Description
SuperFET
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TM
is, Fairchild’s proprietary, new generation of high
FCP4N60
-55 to +150
FCP4N60
± 30
11.7
600
128
300
3.9
2.5
3.9
5.0
4.5
0.4
50
2.5
83
G
SuperFET
D
S
December 2008
www.fairchildsemi.com
to minimize
Unit
W/°C
V/ns
Unit
°C/W
°C/W
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FCP4N60 Summary of contents

Page 1

... Symbol R Thermal Resistance, Junction-to-Case θJC R Thermal Resistance, Junction-to-Ambient θJA ©2008 Fairchild Semiconductor Corporation FCP4N60 Rev. A1 Description TM SuperFET voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. .eff = 32pF) This advanced technology has been tailored ...

Page 2

... G J ≤ 3.9A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FCP4N60 Rev. A1 Package Reel Size TO-220 -- T = 25°C unless otherwise noted C Conditions 250μ 25° ...

Page 3

... Drain Current and Gate Voltage 0.0 2.5 5 Drain Current [A] D Figure 5. Capacitance Characteristics 1200 1000 800 600 C oss C iss 400 200 C rss Drain-Source Voltage [V] DS FCP4N60 Rev. A1 Figure 2. Transfer Characteristics Notes : μ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage 10V 20V Note : ...

Page 4

... Notes : 150 Single Pulse Drain-Source Voltage [V] DS Figure 11-1. Transient Thermal Response Curve FCP4N60 Rev. A1 (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 *Notes : μ 250 A 0.5 D 0.0 100 150 200 -100 ο Figure 10. Maximum Drain Current vs. Case Temperature 100 us ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms FCP4N60 Rev. A1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms FCP4N60 Rev www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions FCP4N60 Rev 220 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FCP4N60 Rev. A1 ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...

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