FDP7N50 Fairchild Semiconductor, FDP7N50 Datasheet - Page 8

• Manufacturer Part Number: FDP7N50
• Description: MOSFET N-CH 500V 7A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDP7N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 900 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 16.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 940pF @ 25V
• Power - Max: 89W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.76 Ohms
• Forward Transconductance Gfs (max / Min): 2.5 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 7 A
• Power Dissipation: 89 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Mechanical Dimensions
TO-220
Dimensions in Millimeters
8
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FDP7N50/FDPF7N50 REV. A