FDB035AN06A0 Fairchild Semiconductor, FDB035AN06A0 Datasheet - Page 5

• Manufacturer Part Number: FDB035AN06A0
• Description: MOSFET N-CH 60V 80A TO-263AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB035AN06A0

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 124nC @ 10V
• Input Capacitance (ciss) @ Vds: 6400pF @ 25V
• Power - Max: 310W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0035 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 22 A
• Power Dissipation: 310000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDB035AN06A0; FDB035AN06A0TR

©2010 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 11. Normalized Gate Threshold Voltage vs
10000
1000
Figure 13. Capacitance vs Drain to Source
100
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.1
-80
C
OSS
V
C
GS
RSS
-40
= 0V, f = 1MHz
Junction Temperature
C
V
DS
C
DS
T
GD
+ C
J
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
0
GD
Voltage
1
40
80
V
T
GS
C
C
ISS
= V
= 25°C unless otherwise noted
120
10
DS
C
o
GS
, I
C)
D
+ C
= 250 A
160
GD
200
60
Figure 14. Gate Charge Waveforms for Constant
Breakdown Voltage vs Junction Temperature
10
8
6
4
2
0
0
1.1
1.0
0.9
1.2
Figure 12. Normalized Drain to Source
-80
V
DD
I
D
= 30V
= 250 A
-40
25
T
J
, JUNCTION TEMPERATURE (
Gate Current
Q
0
g
, GATE CHARGE (nC)
40
50
WAVEFORMS IN
DESCENDING ORDER:
80
I
I
D
D
= 80A
= 40A
120
75
o
C)
FDB035AN06A0 Rev. A2
160
200
100