FDMS3500 Fairchild Semiconductor, FDMS3500 Datasheet

MOSFET N-CH 75V 9.2A POWER56

FDMS3500

Manufacturer Part Number
FDMS3500
Description
MOSFET N-CH 75V 9.2A POWER56
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMS3500

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14.5 mOhm @ 11.5A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
9.2A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
91nC @ 10V
Input Capacitance (ciss) @ Vds
4765pF @ 40V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-PQFN, Power56
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0145 Ohm @ 10 V
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
9.2 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMS3500TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS3500
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2009 Fairchild Semiconductor Corporation
FDMS3500 Rev.C1
FDMS3500
N-Channel Power Trench
75V, 49A, 14.5m
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
DS
GS
AS
D
J
Max r
Max r
Advanced Package and Silicon combination for low r
MSL1 robust package design
100% UIL Tested
RoHS Compliant
, T
JC
JA
Symbol
Device Marking
STG
FDMS3500
DS(on)
DS(on)
= 14.5m at V
= 16.3m at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Top
GS
GS
Power 56
= 10V, I
= 4.5V, I
FDMS3500
-Continuous
-Continuous (Silicon limited)
-Pulsed
Device
D
D
= 11.5A
D
= 10A
T
D
A
®
D
= 25°C unless otherwise noted
MOSFET
D
Parameter
Bottom
DS(on)
Power 56
Package
S
S
1
S
T
T
T
T
T
General Description
This
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
A
C
C
A
C
Pin 1
G
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
DC - DC Conversion
N-Channel
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1a)
D
D
D
D
(Note 3)
MOSFET
7
6
8
5
Tape Width
is
12mm
-55 to +150
Ratings
produced using Fairchild
384
±20
100
2.5
1.3
9.2
75
49
57
96
50
®
process that has
www.fairchildsemi.com
4
May 2009
3
2
1
3000 units
Quantity
S
S
G
S
Units
°C/W
mJ
°C
W
V
V
A
tm

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FDMS3500 Summary of contents

Page 1

... Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA Package Marking and Ordering Information Device Marking Device FDMS3500 FDMS3500 ©2009 Fairchild Semiconductor Corporation FDMS3500 Rev.C1 ® MOSFET General Description = 11.5A This N-Channel D Semiconductor‘s advanced Power Trench = 10A D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance ...

Page 2

... NOTES determined with the device mounted on a 1in JA the user's board design. 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. ° 3. Starting 3mH 16A ©2009 Fairchild Semiconductor Corporation FDMS3500 Rev. 25°C unless otherwise noted J Test Conditions I = 250 250 A, referenced to 25° 0V, V ...

Page 3

... T J Figure 3. Normalized On- Resistance vs Junction Temperature 100 PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDMS3500 Rev. 25°C unless otherwise noted 3.5V GS 2.0 PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX 1 1.0 0 ...

Page 4

... THIS AREA IS 100 LIMITED BY r DS(on SINGLE PULSE T = MAX RATED J 0 125 C 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2009 Fairchild Semiconductor Corporation FDMS3500 Rev. 25°C unless otherwise noted J 10000 1000 V = 50V DD 100 100 400 25 Figure 10 ...

Page 5

... Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - ©2009 Fairchild Semiconductor Corporation FDMS3500 Rev. 25°C unless otherwise noted J SINGLE PULSE 125 C RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve NOTES: DUTY FACTOR PEAK T ...

Page 6

... Dimensional Outline and Pad Layout ©2009 Fairchild Semiconductor Corporation FDMS3500 Rev.C1 6 www.fairchildsemi.com ...

Page 7

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2009 Fairchild Semiconductor Corporation FDMS3500 Rev.C1 F-PFS™ PowerTrench ® FRFET PowerXS™ SM Global Power Resource Programmable Active Droop™ ® Green FPS™ ...

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