FDD10AN06A0 Fairchild Semiconductor, FDD10AN06A0 Datasheet - Page 4

• Manufacturer Part Number: FDD10AN06A0
• Description: MOSFET N-CH 60V 50A D-PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD10AN06A0

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10.5 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Input Capacitance (ciss) @ Vds: 1840pF @ 25V
• Power - Max: 135W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0094 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 135 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD10AN06A0; FDD10AN06A0TR

©2010 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 9. Drain to Source On Resistance vs Drain
100
500
Figure 5. Forward Bias Safe Operating Area
0.1
10
100
18
16
14
12
10
1
75
50
25
8
0
1
0
3
T
T
SINGLE PULSE
Figure 7. Transfer Characteristics
J
C
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
OPERATION IN THIS
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
LIMITED BY r
= MAX RATED
= 25
DD
T
AREA MAY BE
= 15V
J
o
= 175
C
V
10
DS
V
o
GS
, DRAIN TO SOURCE VOLTAGE (V)
C
4
DS(ON)
, GATE TO SOURCE VOLTAGE (V)
T
I
V
D
J
V
GS
, DRAIN CURRENT (A)
= 25
GS
Current
20
= 10V
= 6V
o
C
10
5
T
J
30
= -55
T
C
= 25°C unless otherwise noted
DC
o
C
10ms
6
100 s
10 s
1ms
40
100
50
7
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
100
500
Figure 10. Normalized Drain to Source On
100
Figure 6. Unclamped Inductive Switching
10
75
50
25
2.5
2.0
1.5
1.0
0.5
1
0
0.01
Resistance vs Junction Temperature
Figure 8. Saturation Characteristics
-80
0
If R = 0
t
If R
t
AV
AV
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
= (L)(I
= (L/R)ln[(I
0
-40
V
AS
GS
V
)/(1.3*RATED BV
DS
T
= 10V
0.5
J
AS
t
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
AV
*R)/(1.3*RATED BV
0
, TIME IN AVALANCHE (ms)
0.1
T
Capability
C
STARTING T
= 25
40
o
C
DSS
1.0
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
- V
J
80
STARTING T
= 150
DD
V
DSS
GS
)
V
1
- V
o
= 7V
GS
C
120
DD
= 10V, I
1.5
o
) +1]
C)
J
V
= 25
V
FDD10AN06A0 Rev. A2
GS
GS
160
D
o
= 5V
= 6V
= 50A
C
200
2.0
10