FDD10AN06A0 Fairchild Semiconductor, FDD10AN06A0 Datasheet

MOSFET N-CH 60V 50A D-PAK

FDD10AN06A0

Manufacturer Part Number
FDD10AN06A0
Description
MOSFET N-CH 60V 50A D-PAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDD10AN06A0

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
10.5 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
37nC @ 10V
Input Capacitance (ciss) @ Vds
1840pF @ 25V
Power - Max
135W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0094 Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Power Dissipation
135 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDD10AN06A0
FDD10AN06A0TR

Available stocks

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Part Number
Manufacturer
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Price
Part Number:
FDD10AN06A0
Manufacturer:
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Quantity:
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Part Number:
FDD10AN06A0
Manufacturer:
FAIRCHILD
Quantity:
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FDD10AN06A0
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Part Number:
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Quantity:
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©2010 Fairchild Semiconductor Corporation
FDD10AN06A0
N-Channel PowerTrench
60V, 50A, 10.5m
Features
• r
• Q
• Low Miller Charge
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82560
Thermal Characteristics
V
V
I
E
P
T
R
R
R
MOSFET Maximum Ratings
D
GS
J
DSS
AS
D
Symbol
, T
JC
JA
JA
DS(ON)
g
(tot) = 28nC (Typ.), V
STG
= 9.4m (Typ.), V
SOURCE
GATE
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
Continuous (T
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
Operating and Storage Temperature
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in
TO-252AA
FDD SERIES
GS
GS
amb
C
= 10V
< 115
= 10V, I
o
C
= 25
(FLANGE)
DRAIN
o
o
C, V
C, V
D
®
= 50A
GS
MOSFET
GS
Parameter
= 10V)
= 10V, with R
T
C
= 25°C unless otherwise noted
JA
= 52
Applications
• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 12V and 24V systems
o
2
C/W)
copper pad area
G
D
S
-55 to 175
Ratings
Figure 4
1.11
429
135
100
0.9
60
50
11
52
20
December 2010
FDD10AN06A0 Rev. A2
Units
W/
o
o
o
C/W
C/W
C/W
mJ
o
W
V
V
A
A
A
C
o
C

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FDD10AN06A0 Summary of contents

Page 1

... Distributed Power Architectures and VRMs • Primary Switch for 12V and 24V systems DRAIN T = 25°C unless otherwise noted C Parameter 10V 10V, with C/ copper pad area December 2010 Ratings Figure 4 429 135 0.9 -55 to 175 1.11 100 52 FDD10AN06A0 Rev. A2 Units C/W o C/W o C/W ...

Page 2

... 50A 25A 50A, dI /dt = 100A 50A, dI /dt = 100A Tape Width Quantity 16mm 2500 units Min Typ Max 150 250 100 0.0094 0.0105 - 0.015 0.027 - 0.020 0.023 - 1840 - - 340 - - 110 - 3.5 4.6 = 30V DD = 50A - 9 1.0mA - 6 7 131 - 1. 1 FDD10AN06A0 Rev. A Units ...

Page 3

... Figure 2. Maximum Continuous Drain Current RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) Figure 4. Peak Current Capability CURRENT LIMITED BY PACKAGE 50 75 100 125 150 CASE TEMPERATURE ( C) C Case Temperature NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - FDD10AN06A0 Rev. A2 175 ...

Page 4

... Resistance vs Junction Temperature = (L)(I )/(1.3*RATED DSS (L/R)ln[(I *R)/(1.3*RATED +1] AS DSS DD STARTING STARTING T = 150 TIME IN AVALANCHE (ms) AV Capability 10V PULSE DURATION = DUTY CYCLE = 0.5% MAX C 0.5 1.0 1 DRAIN TO SOURCE VOLTAGE ( 10V - 120 160 JUNCTION TEMPERATURE ( C) J FDD10AN06A0 Rev 2.0 = 50A 200 ...

Page 5

... C) Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature ISS Figure 14. Gate Charge Waveforms for Constant I = 250 120 160 JUNCTION TEMPERATURE ( 30V DD WAVEFORMS IN DESCENDING ORDER 50A 11A GATE CHARGE (nC) g Gate Currents FDD10AN06A0 Rev. A2 200 30 ...

Page 6

... Figure 19. Switching Time Test Circuit ©2010 Fairchild Semiconductor Corporation DUT 0.01 Figure 16. Unclamped Energy Waveforms gs2 DUT g(REF) 0 Figure 18. Gate Charge Waveforms d(ON 90 DUT V GS 50% 10% 0 Figure 20. Switching Time Waveforms BV DSS g(TOT g(TH OFF t d(OFF 10% 10% 90% 50% PULSE WIDTH FDD10AN06A0 Rev 10V 90% ...

Page 7

... C/ never exceeded (EQ 0.01 (0.0645 Figure 21. Thermal Resistance vs Mounting dissipation. Pulse (EQ. 2) Area in Inches Squared (EQ. 3) Area in Centimeters Squared R = 33.32+ 23.84/(0.268+Area) EQ 33.32+ 154/(1.73+Area) EQ (0.645) (6.45) (64. AREA, TOP COPPER AREA in (cm ) Pad Area FDD10AN06A0 Rev. A2 ...

Page 8

... PSPICE Electrical Model .SUBCKT FDD10AN06A0 rev July 2002 7e- 7e-10 Cin 6 8 1.8e-9 Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dplcap 10 5 DplcapMOD Ebreak 67.2 Eds Egs Esg Evthres Evtemp GATE Lgate 1 9 3.2e-9 Ldrain 2 5 1.0e-9 Lsource 3 7 1.2e-9 RLgate RLdrain RLsource ...

Page 9

... Fairchild Semiconductor Corporation DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + + 19 LGATE EVTEMP 8 RGATE + RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 51 ISCL DBREAK 50 RDRAIN 11 DBODY MWEAK EBREAK MMED + MSTRO 17 18 LSOURCE - 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES FDD10AN06A0 Rev. A2 DRAIN 2 SOURCE 3 ...

Page 10

... RTHERM1 TH 6 5.5e-4 RTHERM2 6 5 5.0e-3 RTHERM3 5 4 4.5e-2 RTHERM4 4 3 1.5e-1 RTHERM5 3 2 3.37e-1 RTHERM6 2 TL 3.5e-1 SABER Thermal Model SABER thermal model FDD10AN06A0T template thermal_model th tl thermal_c th ctherm.ctherm1 th 6 =3.2e-3 ctherm.ctherm2 6 5 =3.3e-3 ctherm.ctherm3 5 4 =3.4e-3 ctherm.ctherm4 4 3 =3.5e-3 ctherm ...

Page 11

... TinyBoost™ TinyBuck™ TinyCalc™ ® TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* μ SerDes™ ® UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ Definition Rev. I51 FDD10AN06A0 Rev. A2 ...

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