NDB6020P Fairchild Semiconductor, NDB6020P Datasheet - Page 2
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NDB6020P
Manufacturer Part Number
NDB6020P
Description
MOSFET P-CH 20V 24A D2PAK
Manufacturer
Fairchild Semiconductor
Datasheet
1.NDB6020P.pdf
(6 pages)
Specifications of NDB6020P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 12A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 5V
Input Capacitance (ciss) @ Vds
1590pF @ 10V
Power - Max
60W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.005 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
24 A
Power Dissipation
60000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDB6020P
NDB6020PTR
NDB6020PTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NDB6020P
Manufacturer:
FSC
Quantity:
12 000
Part Number:
NDB6020P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Electrical Characteristics
Symbol
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
R
R
I
g
DYNAMIC CHARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
DSS
GSSF
GSSR
D(on)
D(on)
r
D(off)
f
FS
GS(th)
DS(ON)
DS(ON)
DS(ON)
iss
oss
rss
g
gs
gd
DSS
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
Static Drain-Source On-Resistance
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(Note 1)
(Note 1)
(T
C
= 25°C unless otherwise noted)
Conditions
V
V
V
V
V
V
V
V
V
V
V
V
V
V
I
f = 1.0 MHz
D
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
= -24 A, V
= -16 V, V
= V
= -5 V, I
= -10 V, V
= -10 V,
= 0 V, I
= 8 V, V
= -8 V, V
= -4.5 V, I
= -2.7 V, I
= -2.5 V, I
= -4.5 V, V
= -20 V, I
= -5 V, R
GS
, I
D
D
D
= -250 µA
DS
DS
= -250 µA
GEN
= -12 A
GS
D
D
D
D
GS
GS
DS
= 0 V
= 0 V
= -12 A
= -10 A
= -10 A
= -3 A,
= -5 V
= 0 V
= 6
= -5 V
= 0 V,
T
J
T
T
= 55°C
J
J
= 125°C
= 125°C
Min
-0.4
-0.3
-20
-24
0.041
0.059
0.064
-0.56
1590
Typ
0.06
-0.7
725
215
120
14
15
27
70
25
10
5
0.075
Max
-100
0.05
0.08
0.07
100
-0.7
250
150
-10
30
60
35
-1
-1
NDP6020P Rev.C1
Units
µA
µA
nA
nA
nS
nS
nS
nS
nC
nC
nC
pF
pF
pF
V
V
A
S