FDD6690A Fairchild Semiconductor, FDD6690A Datasheet - Page 2

• Manufacturer Part Number: FDD6690A
• Description: MOSFET N-CH 30V 12A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD6690A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 5V
• Input Capacitance (ciss) @ Vds: 1230pF @ 15V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 12 m Ohms
• Forward Transconductance Gfs (max / Min): 47 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 46 A
• Power Dissipation: 3.3 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD6690ATR

Electrical Characteristics
Symbol
Drain-Source Avalanche Ratings
E
I
Off Characteristics
BV
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
R
Switching Characteristics
t
t
t
t
Q
Q
Q
AS
DSS
GSS
D(on)
d(on)
r
d(off)
f
FS
BV
V
AS
GS(th)
DS(on)
iss
oss
rss
G
g
gs
gd
GS(th)
DSS
T
T
DSS
J
J
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Parameter
(Note 2)
(Note 2)
(Note 2)
Single Pulse, V
V
I
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
T
D
D
A
GS
DS
GS
DS
GS
GS
GS
GS
DS
DS
GS
DD
GS
DS
GS
= 250 A,Referenced to 25 C
= 250 A,Referenced to 25 C
= 25°C unless otherwise noted
= 24 V,
= V
= 10 V,
= 15 V,
= 15V,
= 0 V,
= 20 V,
= 10 V,
= 4.5 V,
= 10 V, I
= 10 V,
= 15 mV,
= 15 V,
= 10 V,
= 5 V
Test Conditions
GS
,
D
I
I
I
I
V
V
I
DD
= 12 A,T
I
V
V
D
D
D
D
I
R
D
D
f = 1.0 MHz
D
DS
GS
DS
GS
= 250 A
= 250 A
= 12 A
= 10 A
GEN
= 12 A,
= 12 A
= 15 V, I
= 1 A,
= 5 V
= 0 V
= 0 V,
= 0 V
= 6
J
=125 C
D
= 12A
Min Typ Max Units
30
50
1
1230
11.4
325
150
1.9
7.7
9.9
1.5
3.5
5.1
24
–5
47
10
29
12
13
7
180
100
12
14
19
19
13
46
21
18
12
1
3
FDD6690A Rev. EW)
mV/ C
mV/ C
m
mJ
nA
pF
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
V
V
A
S
A