FDD6N20TM Fairchild Semiconductor, FDD6N20TM Datasheet - Page 2

• Manufacturer Part Number: FDD6N20TM
• Description: MOSFET N-CH 200V 4.5A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDD6N20TM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 2.3A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 6.1nC @ 10V
• Input Capacitance (ciss) @ Vds: 230pF @ 25V
• Power - Max: 40W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.8 Ohms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 40 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 12.8 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 5.6 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD6N20TM

FDD6N20 / FDU6N20 Rev. A
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 5.9mH, I
3: I
4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
BV
ΔBV
/
I
I
V
R
g
C
C
C
Q
Q
Q
t
t
t
t
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
FS
GS(th)
SD
DS(on)
iss
oss
rss
g(tot)
gs
gd
rr
SD
Device Marking
DSS
Symbol
ΔT
DSS
≤ 4.5A, di/dt ≤ 200A/μs, V
FDD6N20
FDD6N20
FDU6N20
J
AS
= 4.5A, V
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
DD
= 50V, R
DD
≤ BV
FDD6N20TM
FDU6N20TU
FDD6N20TF
G
Device
DSS
= 25Ω, Starting T
Parameter
, Starting T
J
= 25°C
J
= 25°C
Package
D-PAK
D-PAK
I-PAK
I
I
V
V
V
V
V
dI
V
V
V
V
f = 1MHz
V
V
V
R
D
D
DS
DS
GS
DD
GS
GS
GS
GS
DS
DS
DS
GS
G
F
= 250μA, V
= 250μA, Referenced to 25
/dt = 100A/μs
= 25Ω
= 200V, V
= 160V, T
= 0V, I
= ±30V, V
= 40V, I
= 25V, V
= 160V, I
= 100V, I
= 0V, I
= V
= 10V, I
= 10V
DS
T
Test Conditions
, I
C
SD
2
SD
D
Reel Size
D
= 25
D
GS
GS
D
380mm
380mm
D
= 2.3A
= 4.5A
= 6A
GS
C
= 2.3A
DS
= 250μA
= 6A
= 6A
= 125
= 0V
= 0V, T
o
-
= 0V
= 0V
C unless otherwise noted
o
C
J
= 25
(Note 4, 5)
(Note 4, 5)
o
(Note 4)
(Note 4)
o
C
C
Tape Width
16mm
16mm
-
Min.
200
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
12.8
0.28
120
170
8.3
5.6
0.4
0.6
2.9
6.3
4.7
1.2
2.2
15
45
-
-
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
Max.
±100
26.7
21.2
35.5
2500
2000
230
9.5
6.1
4.5
1.4
5.0
0.8
40
10
60
18
70
1
-
-
-
-
-
-
-
Units
V/
nC
nC
nC
μA
pF
pF
pF
nA
ns
ns
ns
ns
ns
μC
V
Ω
A
A
V
V
S
o
C